The composition (St/N) and properties of glow discharge-deposited silicon nitride films are sensitive to variations in many apparatus parameters. A rapid and simple test for film composition is needed to monitor and control production equipment. The position of a defined optical absorption edge in the near ultraviolet and visible ranges serves this purpose over a Si/N atomic ratio range of 0.8-1.5. Film thickness is determined at the same time. The procedure and a typical calibration curve are given; computation is simple. The existence of relatively low energy optical absorption is considered evidence for a highly distorted and irregular structure compared with that of pyrolytic SiaN4..

Liquidus and solidus data are presented for the 800°, 850°, and 900°C isotherms, in the In‐rich corner of the In‐Ga‐As phase diagram. A simple solution model gives excellent agreement with the solidus data, but describes the liquidus more poorly than desired.

An introduction is given to the principles underlying the anodization of pre‐existing dielectric films. In the case of amorphous silicon nitride films on a silicon substrate it is shown that conversion of the nitride film to anodic SiO2 occurs by oxygen ions reacting with the nitrogen, the latter being evolved from the film as N2 or as a nitrogen oxygen compound. The process has been applied to the opening of windows in normalSi/SiO2/Si3N4 structures. Nitride films up to 1000Aå thick can be rendered soluble by a single anodization step to 350v; thicker films require a repeated anodization. The electric field applied during anodization causes a shift in surface potential of the silicon substrate. The original surface potential can be restored by a bake in forming gas at 500°C. High‐resistivity silicon tends to passivate under anodic bias; growth of an oxide film occurs only at very large current densities.

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