An analytical subthreshold current modeling of cylindrical gate all around (CGAA) MOSFET incorporating the influence of device design engineering

Pratap, Yogesh; Ghosh, Prahlad C.; Haldar, Subhasis; Gupta, Radhey S.; Gupta, Mridula

doi:10.1016/j.mejo.2014.01.015

Cited by 44 publications

(29 citation statements)

References 23 publications

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“…where V gs is the gate-to-source voltage, t si is the diameter of the silicon body, and C oxcyl is the cylindrical gate-oxide capacitance per unit area [16]. The electron affinity of silicon and the flat-band voltage of damaged and undamaged regions are given as…”

Section: Model Formulationmentioning

confidence: 99%

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Localized Charge-Dependent Threshold Voltage Analysis of Gate-Material-Engineered Junctionless Nanowire Transistor

Pratap

Haldar

Gupta³

et al. 2015

IEEE Trans. Electron Devices

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In this paper, the threshold voltage analysis of junctionless nanowire transistor (JNT) due to radiation/ process/stress/hot-carrier damage-induced localized/fixed charges at elevated temperatures is discussed. A temperature-dependent threshold voltage model for JNT with localized charges has been developed including the source/drain depleted regions. The impact of position, density, and polarity of localized charges on channel potential, bandgap energy, and threshold voltage is studied. Four different localized charge density profiles have been used to evaluate the performance degradation. The results demonstrate that localized charges significantly change the device threshold voltage and temperature sensitivity and show less detrimental effect at elevated temperatures.Index Terms-Hot-carrier effects, junctionless nanowire transistor (JNT), localized charges, temperature sensitivity.

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Section: Model Formulationmentioning

confidence: 99%

“…Fig. 1 shows 3-D and cross-sectional view of cylindrical gate [16] GME JNT. ATLAS 3-D device simulator [17] has been used for the analysis.…”

mentioning

confidence: 99%

Localized Charge-Dependent Threshold Voltage Analysis of Gate-Material-Engineered Junctionless Nanowire Transistor

Pratap

Haldar

Gupta³

et al. 2015

IEEE Trans. Electron Devices

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“…Also, cylindrical gate-all-around (CGAA) MOSFETs in which the gate oxide and the gate electrodes wrap around the channel region exhibit excellent electrostatic control of the channel, no floating body effect,stoutness against SCEs, better scaling options, ideal sub threshold swing as compared to other multi-gate MOSFETs [6]. Hence, the CGAA MOSFETs are a brilliant solution for nanoscale technology CMOS devices [7].…”

Section: Introductionmentioning

confidence: 99%

Design, Analysis & Simulation of 30 nm Cylindrical Gate all around MOSFET

Sachdeva¹,

Aggarwal²,

Kushwaha³

2016

International Journal of Advanced Research in Computer and Comm

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Cylindrical gate all around (GAA) MOSFET is a drastic invention and a potential candidate to replace conventional MOSFET, as it introduces new direction for transistor scaling without hindering the device performance.In this work, electrical characteristics of cylindrical GAA (CGAA) MOSFET at 50nm channel length (Lg), 10nm channel thickness (t si ) are systematically analysed. Various electrical characteristics such as On current (I ON ), subthreshold leakage current (I OFF ), the threshold voltage (V th ), DIBL are calculated and analysed at various device design parameters.All the device performances of Cylindrical GAA MOSFETs are investigated through Atlas device simulator from Silva co.

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“…Chiang proposed a subthreshold behavior model for the short channel asymmetrical dual-material double gate (ADMDG) MOSFETs [12]. An analytical subthreshold current modeling of cylindrical gate all around (CGAA) MOSFET incorporating the influence of device design engineering is also reported [14]. Colinge et al [23] have reported about the process fabrication and electrical characteristics of an surrounding gate SOI MOSFET.…”

Section: Introductionmentioning

confidence: 99%

Numerical modeling on the optical characteristics of triple material gate stack gate all-around (TMGSGAA) MOSFET

Ramesh

Madheswaran²,

Kannan

2015

Superlattices and Microstructures

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An analytical subthreshold current modeling of cylindrical gate all around (CGAA) MOSFET incorporating the influence of device design engineering

Cited by 44 publications

References 23 publications

Localized Charge-Dependent Threshold Voltage Analysis of Gate-Material-Engineered Junctionless Nanowire Transistor

Localized Charge-Dependent Threshold Voltage Analysis of Gate-Material-Engineered Junctionless Nanowire Transistor

Design, Analysis & Simulation of 30 nm Cylindrical Gate all around MOSFET

Numerical modeling on the optical characteristics of triple material gate stack gate all-around (TMGSGAA) MOSFET

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