Cylindrical gate all around (GAA) MOSFET is a drastic invention and a potential candidate to replace conventional MOSFET, as it introduces new direction for transistor scaling without hindering the device performance.In this work, electrical characteristics of cylindrical GAA (CGAA) MOSFET at 50nm channel length (Lg), 10nm channel thickness (t si ) are systematically analysed. Various electrical characteristics such as On current (I ON ), subthreshold leakage current (I OFF ), the threshold voltage (V th ), DIBL are calculated and analysed at various device design parameters.All the device performances of Cylindrical GAA MOSFETs are investigated through Atlas device simulator from Silva co.

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In the present paper a 2D-shell finite element model is proposed to carry out static analysis of piezolaminated composite shells by incorporating nonlinear constitutive relations in order to describe the electromechanical coupling under strong electric fields. The present shell element has 5 mechanical DOFs and 3 electrical DOFs per node. The developed composite piezolaminated shell element is employed to study the static behavior and shaping of spherical antenna reflector laminated with piezo-patches under both weak and strong electric fields.