2017
DOI: 10.1039/c7ra00366h
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An approach for correlating the structural and electrical properties of Zr4+-modified SrBi4Ti4O15/SBT ceramic

Abstract: In the present work, zirconium (Zr) modified strontium bismuth titanate (SBT) ceramics were prepared by soild state reaction route and its effects on the structural and electrical properties were thoroughly investigated.

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Cited by 69 publications
(24 citation statements)
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“…In fact, the dielectric constant of the materials is linearly proportional to the average value of grain size. 43 Therefore, the decrease of dielectric constant and loss tangent as a function of Co doping is due to the decrease of grain size, which is in agreement with the previous results (conduction mechanism). 33 This indicates that there is a strong relation between the conduction process and the dielectric polarization in these Co doped Ti.…”
Section: Resultssupporting
confidence: 92%
“…In fact, the dielectric constant of the materials is linearly proportional to the average value of grain size. 43 Therefore, the decrease of dielectric constant and loss tangent as a function of Co doping is due to the decrease of grain size, which is in agreement with the previous results (conduction mechanism). 33 This indicates that there is a strong relation between the conduction process and the dielectric polarization in these Co doped Ti.…”
Section: Resultssupporting
confidence: 92%
“…The dielectric loss increases slightly with temperature below 600 K, and then more rapidly at higher temperature, which can also indicate a transition to the paraelectric phase where the sample becomes more conducting. Moreover, at high temperature, the electrical conductivity is enhanced by thermal effects as is the case for most semiconductors, resulting in a significant increase of the dielectric loss [23].…”
Section: Resultsmentioning
confidence: 99%
“…32 Indeed, the evolution of 3 00 is impacted by several factors 33 like the lattice vibration mode, the oxygen vacancies, the presence of secondary phases 34 and the grain size. 35 Thus, the increment dielectric loss with temperature is a result of the impact of temperature on these intrinsic and extrinsic factors which were temperature dependent. The increase of dielectric loss with annealing temperature is due to the increase of grain size as investigated by structural analysis and to the substitution of the sulfur by oxygen in the lattice which induced by thermal annealing.…”
Section: Dielectric Studiesmentioning
confidence: 99%