An approach to the design of highly selective resonant-cavity-enhanced photodetectors

Ramam, A.; Chowdhury, Golam Kibria; Chua, Song-Liang

doi:10.1063/1.1914964

Cited by 8 publications

(7 citation statements)

References 7 publications

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“…Another desirable feature attracting significant attention is the integration of wavelength and polarization selectivity into photodetectors that usually only sense the signal intensity. − This would facilitate communication encoded in polarization states of light and valuable demultiplexing of wavelength division multiplexed (WDM) signals, greatly extending the available bandwidth of optical interconnection . Efforts to increase functionality again require the use of bulky external structures, ,− akin to the attempts to enhance responsivity. Polarization and wavelength selective detection has been realized by adding filters capable of screening specific polarization or wavelength of light, including grating couplers, wire grid polarizers, interdigitated metallic electrodes, or planar cavities .…”

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confidence: 99%

“…Efforts to increase functionality again require the use of bulky external structures, ,− akin to the attempts to enhance responsivity. Polarization and wavelength selective detection has been realized by adding filters capable of screening specific polarization or wavelength of light, including grating couplers, wire grid polarizers, interdigitated metallic electrodes, or planar cavities . Here, we for the first time propose a photodetector that combines the strong intrinsic optical resonance effects in semiconductor nanowires with the excellent high-speed, low-noise performance of metal−semiconductor−metal (MSM) photodetectors.…”

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confidence: 99%

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Resonant Germanium Nanoantenna Photodetectors

et al. 2010

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On-chip optical interconnection is considered as a substitute for conventional electrical interconnects as microelectronic circuitry continues to shrink in size. Central to this effort is the development of ultracompact, silicon-compatible, and functional optoelectronic devices. Photodetectors play a key role as interfaces between photonics and electronics but are plagued by a fundamental efficiency-speed trade-off. Moreover, engineering of desired wavelength and polarization sensitivities typically requires construction of space-consuming components. Here, we demonstrate how to overcome these limitations in a nanoscale metal-semiconductor-metal germanium photodetector for the optical communications band. The detector capitalizes on antenna effects to dramatically enhance the photoresponse (>25-fold) and to enable wavelength and polarization selectivity. The electrical design featuring asymmetric metallic contacts also enables ultralow dark currents (approximately 20 pA), low power consumption, and high-speed operation (>100 GHz). The presented high-performance photodetection scheme represents a significant step toward realizing integrated on-chip communication and manifests a new paradigm for developing miniaturized optoelectronics components.

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Resonant Germanium Nanoantenna Photodetectors

et al. 2010

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“…Low dimensional III-V semiconductor nanostructures have been widely studied on their electronic and optical properties for device applications. Among the nanostructures, the resonant-cavity-enhanced photodetectors (RCE-PDs) have been extensively studied due to their novel physical mechanism and special device applications over the past two decades [1][2][3][4][5][6][7]. A RCE-PD is usually constructed by placing multiple active layers at the peak positions of a standing wave in a resonant cavity, sandwiched between two distributed Bragg reflectors (DBRs).…”

Section: Introductionmentioning

confidence: 99%

“…The DBR mirrors are usually made of quarter wave stacks with a periodic modulation of refractive indices. Metals are usually not used as mirrors because they do not provide wavelength selectivity [2]. RCE-PDs also have the ability of wavelength selectivity.…”

Section: Introductionmentioning

confidence: 99%

Modeling and Simulation of a Resonant-Cavity-Enhanced InGaAs/GaAs Quantum Dot Photodetector

Wang

Guo

2015

Advances in Condensed Matter Physics

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We simulated and analyzed a resonant-cavity-enhancedd InGaAs/GaAs quantum dot n-i-n photodiode using Crosslight Apsys package. The resonant cavity has a distributed Bragg reflector (DBR) at one side. Comparing with the conventional photodetectors, the resonant-cavity-enhanced photodiode (RCE-PD) showed higher detection efficiency, faster response speed, and better wavelength selectivity and spatial orientation selectivity. Our simulation results also showed that when an AlAs layer is inserted into the device structure as a blocking layer, ultralow dark current can be achieved, with dark current densities 0.0034 A/cm at 0 V and 0.026 A/cm at a reverse bias of 2 V. We discussed the mechanism producing the photocurrent at various reverse bias. A high quantum efficiency of 87.9% was achieved at resonant wavelength of 1030 nm with a FWHM of about 3 nm. We also simulated InAs QD RCE-PD to compare with InGaAs QD. At last, the photocapacitance characteristic of the model has been discussed under different frequencies.

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“…2,9,10 RCE PDs also have the ability of wavelength selectivity that makes RCE-PDs much attractive for application in high performance optical communications and interconnections, especially in wavelength-division-multiplexing optical communication. [11][12][13][14] In this letter, we report the growth and performance of a metamorphic InGaAs-RCE PD grown on GaAs substrate. 100 nm InGaAs absorption layer was grown on a linearly graded InAlGaAs buffer layer with GaAs/AlAs as bottom DBR and Ta 2 O 5 / SiO 2 as top DBR.…”

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High-performance metamorphic InGaAs resonant cavity enhanced photodetector grown on GaAs substrate

Liu

Han

Zhu

et al. 2011

Applied Physics Letters

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In this letter, we demonstrated a top illuminated 1.55 μm metamorphic InGaAs resonant-cavity-enhanced p-i-n photodetector grown on GaAs substrate. The photodetectors were grown by a solid-source molecular beam epitaxy system. The high quality linearly graded InxAl0.4Ga1−x−0.4As metamorphic buffer layer enabled photodiodes to achieve ultralow dark current densities of 2.3×10−6 A/cm2 at 0 V and 4.2×10−5 A/cm2 at a reverse bias of 5 V. A high quantum efficiency of 84.4% at resonant wavelength of 1542 nm, a full width at half maximum about 14 nm, and a −3 dB bandwidth up to 13 GHz were also obtained.

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An approach to the design of highly selective resonant-cavity-enhanced photodetectors

Cited by 8 publications

References 7 publications

Resonant Germanium Nanoantenna Photodetectors

Resonant Germanium Nanoantenna Photodetectors

Modeling and Simulation of a Resonant-Cavity-Enhanced InGaAs/GaAs Quantum Dot Photodetector

High-performance metamorphic InGaAs resonant cavity enhanced photodetector grown on GaAs substrate

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