High-performance metamorphic InGaAs resonant cavity enhanced photodetector grown on GaAs substrate

Liu, S. Q.; Han, Qin; Zhu, Bingli; Yang, Xun; Ni, Haiqiao; He, Jinmei; Wang, Xiaohong; Li, M. F.; Zhu, Yan‐Rong; Wang, J.; Wang, X. P.; Niu, Zhichuan

doi:10.1063/1.3592569

Cited by 7 publications

(3 citation statements)

References 19 publications

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“…Linearly graded metamorphic buffers have been the widely used in device applications, including HEMTs [18,21,23,105,106,109,110,118,123,129,131,134,135], metal oxide semiconductor high electron mobility transistors (MOS HEMTs) [136], heterojunction bipolar transistors (HBTs) [113,117,118,137], LEDs [31,123], laser diodes [26,81,103,106,122], photodiodes [18,80,108,138,139], and solar cells [119]. Recent work with metamorphic HEMTs has emphasized In x Ga 1Àx As/In y Al 1Ày As quantum wells grown on GaAs (001) substrates by MBE [18,21,23,35,103,118,123,129,131,135].…”

Section: Device Applications Of Linear Buffersmentioning

confidence: 99%

Low-Temperature and Metamorphic Buffer Layers

Ayers

2015

Handbook of Crystal Growth

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Section: Device Applications Of Linear Buffersmentioning

confidence: 99%

Low-Temperature and Metamorphic Buffer Layers

Ayers

2015

Handbook of Crystal Growth

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“…The RCPDs can be fabricated by directly employing the VCSEL epitaxial layers . Resonant cavity‐enhanced photodetectors (RCE‐PDs) have been studied for a long time, and still attracted a lot of researcher . The RCPDs have the advantage of higher responsivity over a specific wavelength range (cavity mode) which is naturally close to the emission wavelength of monolithic VCSELs.…”

Section: Introductionmentioning

confidence: 99%

Design and performance of high temperature operating resonant-cavity photodiodes based on 795 nm-VCSEL structure

Zhao

Sun

Sheng

et al. 2016

Phys. Status Solidi A

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We present detailed simulated and experimental results on spectral response of high temperature operating resonant‐cavity photodiodes (RCPDs). Room temperature external quantum efficiency (EQE) spectrum shows peaks at resonance wavelength, ground‐state emission, and lower reflectivity position. The EQE is ∼1.25, ∼0.7, and ∼3.75%, respectively, at the above three peak positions, i.e., 793, 778, and 743 nm. The maximum EQE increases from ∼1.25 to ∼18% as incident light angle increasing from 0 to 60°. The bandgap of AlGaAs barrier layer was also obtained by the angle dependence of EQE measurement. The amount of EQE/responsivity peak shift with temperature can be determined to be Δλ = T × 0.065 nm K−1, which is consistent with the temperature dependence of CM. The maximum responsivity increases from ∼0.01 to ∼0.19 A W−1 when temperature increasing from 300 to 370 K at −1 V bias. For high temperature operating RCPDs, the EQE/responsivity are largely governed by the total absorption within the active region. The performance of RCPDs can be further improved by increasing the pairs of bottom DBR and optimizing the pairs of top DBR.

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“…Low dimensional III-V semiconductor nanostructures have been widely studied on their electronic and optical properties for device applications. Among the nanostructures, the resonant-cavity-enhanced photodetectors (RCE-PDs) have been extensively studied due to their novel physical mechanism and special device applications over the past two decades [1][2][3][4][5][6][7]. A RCE-PD is usually constructed by placing multiple active layers at the peak positions of a standing wave in a resonant cavity, sandwiched between two distributed Bragg reflectors (DBRs).…”

Section: Introductionmentioning

confidence: 99%

Modeling and Simulation of a Resonant-Cavity-Enhanced InGaAs/GaAs Quantum Dot Photodetector

Wang

Guo

2015

Advances in Condensed Matter Physics

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We simulated and analyzed a resonant-cavity-enhancedd InGaAs/GaAs quantum dot n-i-n photodiode using Crosslight Apsys package. The resonant cavity has a distributed Bragg reflector (DBR) at one side. Comparing with the conventional photodetectors, the resonant-cavity-enhanced photodiode (RCE-PD) showed higher detection efficiency, faster response speed, and better wavelength selectivity and spatial orientation selectivity. Our simulation results also showed that when an AlAs layer is inserted into the device structure as a blocking layer, ultralow dark current can be achieved, with dark current densities 0.0034 A/cm at 0 V and 0.026 A/cm at a reverse bias of 2 V. We discussed the mechanism producing the photocurrent at various reverse bias. A high quantum efficiency of 87.9% was achieved at resonant wavelength of 1030 nm with a FWHM of about 3 nm. We also simulated InAs QD RCE-PD to compare with InGaAs QD. At last, the photocapacitance characteristic of the model has been discussed under different frequencies.

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High-performance metamorphic InGaAs resonant cavity enhanced photodetector grown on GaAs substrate

Cited by 7 publications

References 19 publications

Low-Temperature and Metamorphic Buffer Layers

Low-Temperature and Metamorphic Buffer Layers

Design and performance of high temperature operating resonant-cavity photodiodes based on 795 nm-VCSEL structure

Modeling and Simulation of a Resonant-Cavity-Enhanced InGaAs/GaAs Quantum Dot Photodetector

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