An APS-C format 14b digital CMOS image sensor with a dynamic response pixel

Pates, Dan; Lyu, Jeong-Ho; Osawa, Shinji; Takayanagi, Isao; Sato, Toshiaki; Bales, Tim; Kawamura, Katsuyuki; Pages, Eduard; Matsuo, Shin’ichiro; Tetsuji, Kawaguchi; Sugiki, Tadashi; Yoshimura, Norio; Nakamura, Junichi; Ladd, John; Yin, Zhiping; Iimura, Russell; Fan, Xiaofeng; Johnson, Scott D.; Rayankula, Aditya; Mauritzson, Rick; Agranov, Gennadiy

doi:10.1109/isscc.2011.5746378

Cited by 13 publications

(7 citation statements)

References 3 publications

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“…To realize large saturation level and a low readout noise of pixel, multiple gain pixel [45], [59], [60] or LOFIC [61], [62], [83], [86]- [89], [98], [99] scheme has been introduced. The multiple pixel gain scheme is suitable for the SEHDR and introduced for consumer sensors with on-chip linearization functions, a 90-dB SEHDR sensor with triple gain pixel [56].…”

Section: Linear Response Hdr With Single Exposurementioning

confidence: 99%

HDR CMOS Image Sensors for Automotive Applications

Takayanagi¹,

Kuroda

2022

IEEE Trans. Electron Devices

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Because of various purposes and high dynamic range (HDR) of brightness of objects in automotive applications, HDR image capture is a primary requirement. In this article, HDR CMOS image sensor (CIS) technology and its automotive applications are discussed including application requirements, basic HDR approaches and trends of HDR CMOS image sensor technologies, advantages and disadvantages for automotive application, and future prospect of the HDR technology. LED flicker caused by time aliasing effect and motion artifacts are two major issues in conventional multiple exposure HDR (MEHDR) approach, and several HDR technologies have been introduced for automotive applications. The advancements of image sensor fabrication technology, for instance, backside illumination (BSI) process and pixel level hybrid wafer bonding, have created new trends in the HDR technology.

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Section: Linear Response Hdr With Single Exposurementioning

confidence: 99%

HDR CMOS Image Sensors for Automotive Applications

Takayanagi¹,

Kuroda

2022

IEEE Trans. Electron Devices

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“…Therefore, the application of device and process technologies in the unit transistor level has been carried out. As methods of reducing RTN by the introduction of these technologies, the buried channel transistor, [5][6][7] atomically flat gate insulator film, 8) and ring shaped gate transistor, [9][10][11] for instance, have been reported to be useful. In addition, the behaviors of RTN toward changes in the SF operating condition have been reported.…”

Section: Introductionmentioning

confidence: 99%

Effect of drain current on appearance probability and amplitude of random telegraph noise in low-noise CMOS image sensors

Ichino

Mawaki

Teramoto

et al. 2018

Jpn. J. Appl. Phys.

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Random telegraph noise (RTN), which occurs in in-pixel source follower (SF) transistors, has become one of the most critical problems in highsensitivity CMOS image sensors (CIS) because it is a limiting factor of dark random noise. In this paper, the behaviors of RTN toward changes in SF drain current conditions were analyzed using a low-noise array test circuit measurement system with a floor noise of 35 µV rms . In addition to statistical analysis by measuring a large number of transistors (18048 transistors), we also analyzed the behaviors of RTN parameters such as amplitude and time constants in the individual transistors. It is demonstrated that the appearance probability of RTN becomes small under a small drain current condition, although large-amplitude RTN tends to appear in a very small number of cells.

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“…To improve the noise performance, the conventional ways are a dynamic response pixel using a switchable floating diffusion conversion gain 2) and a preamplifier at the foremost stage of the readout circuitry with a high analog gain 3) . However in the first instance it decreases the photo diode area and the latter increases the chip size because of an additional amplifier circuit.…”

Section: Introductionmentioning

confidence: 99%

[Paper] A 1/1.7-inch 20Mpixel Back-Illuminated Stacked CMOS Image Sensor with Multi-Functional Modes

Wakabayashi

Suzuki

Kainuma

et al. 2016

MTA

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We have developed a 1/1.7-inch 20Mpixel back-illuminated stacked CMOS image sensor with multi-functional modes which are parallel multiple sampling, the two simultaneous output streams and data compression. This sensor has achieved a RMS random noise of 1.3e-with the parallel multiple sampling and the two simultaneous output streams of 4Mpixel for a movie mode and 16Mpixel for a still mode with a 2.3Gb/s/lane high-speed interface. Moreover, the high speed output mode of 16Mpixel at 120fps with a low image degradation compression. The stacked structure realizes on an analog implementation of the double column parallel ADCs.

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An APS-C format 14b digital CMOS image sensor with a dynamic response pixel

Cited by 13 publications

References 3 publications

HDR CMOS Image Sensors for Automotive Applications

HDR CMOS Image Sensors for Automotive Applications

Effect of drain current on appearance probability and amplitude of random telegraph noise in low-noise CMOS image sensors

[Paper] A 1/1.7-inch 20Mpixel Back-Illuminated Stacked CMOS Image Sensor with Multi-Functional Modes

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