An aqueous solution-based doping strategy for large-scale synthesis of Sb-doped ZnO nanowires

Abstract

An aqueous solution-based doping strategy was developed for controlled doping impurity atoms into a ZnO nanowire (NW) lattice. Through this approach, antimony-doped ZnO NWs were successfully synthesized in an aqueous solution containing zinc nitrate and hexamethylenetetramine with antimony acetate as the dopant source. By introducing glycolate ions into the solution, a soluble antimony precursor (antimony glycolate) was formed and a good NW morphology with a controlled antimony doping concentration was successfully achieved. A doping concentration study suggested an antimony glycolate absorption doping mechanism. By fabricating and characterizing NW-based field effect transistors (FETs), stable p-type conductivity was observed. A field effect mobility of 1.2 cm(2) V(-1) s(-1) and a carrier concentration of 6 × 10(17) cm(-3) were achieved. Electrostatic force microscopy (EFM) characterization on doped and undoped ZnO NWs further illustrated the shift of the metal-semiconductor barrier due to Sb doping. This work provided an effective large-scale synthesis strategy for doping ZnO NWs in aqueous solution.

Highly efficient UV-sensing properties of Sb-doped ZnO nanorod arrays synthesized by a facile, single-step hydrothermal reaction

“…The solution growth of doped ZnO NRs has been recently reported by quite many research groups and the control of the morphology and material properties is also studied including antimony doped ZnO. 20,23,[37][38][39] Photosensor applications based on solution-prepared, doped ZnO NRs are also studied several times.…”

Origin of p-type conductivity of Sb-doped ZnO nanorods and the local structure around Sb ions

“…These values are close to those of p-type Sb-doped ZnO fabricated by hydrothermal methods. 23 To elucidate the local structural environment of Sb dopant ions, the valence state of Sb in Sb-doped ZnO nanorods was directly compared with those of Sb in Sb 2 O 3 and Sb 2 O 5 . Figure 3 presents the X-ray photoelectron spectra (XPS) of Sb 3d 3/2 peaks of Sb-doped ZnO, Sb 2 O 3 , and Sb 2 O 5 located at 539.78 eV, 539.25 eV, and 540.42 eV, respectively.…”

Stable p-Type Conduction from Sb-Decorated Head-to-Head Basal Plane Inversion Domain Boundaries in ZnO Nanowires

“…26 In particular, Sb-doped ZnO NWs grown on n-type ZnO thin films have been used to create electrically pumped waveguide lasers that are stable over 7 months. 27 We recently demonstrated p-type Sb-doped ZnO NWs synthesized and doped in solution, 26 which has the advantage of low cost and ease of processing. Here, we combine aberration-corrected scanning transmission electron microscopy (STEM) and density functional theory (DFT) calculations to elucidate the defects responsible for p-type conduction in solution-synthesized Sb-doped NWs.…”

“…Measurements were made with a HP4155B semiconductor parameter analyzer. Further details of the NW fabrication and electrical measurements just after fabrication may be found in ref 26. Figure 1a,b shows electrical measurements of the same device 18 months later.…”