An Assessment of µ-Czochralski, Single-Grain Silicon Thin-Film Transistor Technology for Large-Area, Sensor and 3-D Electronic Integration

Saputra, Nitz; Danesh, M.; Baiano, A.; Ishihara, Ryoichi; Long, John R.; Karaki, Nobuo; Inoue, Satoshi

doi:10.1109/jssc.2008.922404

Cited by 22 publications

(13 citation statements)

References 19 publications

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“…N-and p-channel SG Ge TFTs showed electron and hole mobility of as high as 3337cm 2 /Vs and 1719cm 2 /Vs, respectively. On/off current ratio for the both types of TFTs was in the order of 10 7 . This will open several new applications in TFTs for displays with ultra-wide-band RF wireless communication interface and monolithic 3D-ICs with optical interconnect.…”

Section: Discussionmentioning

confidence: 97%

(Invited) Single-Grain Germanium TFTs

Ishihara¹,

Chen²,

Baiano³

et al. 2011

ECS Trans.

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We review our recent achievements in location-control of Ge grains and high performance single-grain (SG) Ge thin film transistor (TFT) fabricated inside a Ge grain. Large Ge grains having a grain size of 10 µm were obtained at predetermined positions by the µ-Czochralski process using excimer-laser and sputtered a-Ge layer. TFTs were fabricated inside the single grain of Ge. Capping silicon dioxide was applied before the laser crystallization with which a high quality Ge/insulator interface was formed during the laser annealing. Source/drain regions were formed by doped Si instead of the Ge, which ensures a low contact resistance and suppresses fast dopant diffusion in the channel. N- and p-channel SG Ge TFTs showed electron and hole mobility of as high as 3337cm^2/Vs and 1719cm^2/Vs, respectively. On/off current ratio for the both types of TFTs was in the order of 10^7.

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Section: Discussionmentioning

confidence: 97%

(Invited) Single-Grain Germanium TFTs

Ishihara¹,

Chen²,

Baiano³

et al. 2011

ECS Trans.

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“…In addition to the OTFTs mentioned in Section III-C, TFTs based on amorphous silicon [32], polysilicon [33], recrystallized large-grain quasi-monocrystalline silicon [34] and metal-oxide materials [35] can be employed if higher process temperatures are feasible, such as on glass and thin-glass substrates.…”

Section: A Thin-film Transistorsmentioning

confidence: 99%

Hybrid Systems-in-Foil—Combining the Merits of Thin Chips and of Large-Area Electronics

Burghartz

Alavi

Albrecht

et al. 2019

IEEE J. Electron Devices Soc.

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This paper reports on the status of a comprehensive ten-year research and development effort toward hybrid system-in-foil (HySiF). In HySiF, the merits of high-performance integrated circuits on ultra-thin chips and of large-area and discrete electronic component implementation are combined in a complementary fashion in and on a flexible carrier substrate. HySiF paves the way to entirely new applications of electronic products where form factor, form adaptivity and form flexibility are key enablers. In this review paper the various aspects of thin-chip fabrication and embedding, device and circuit design under impact of unknown or variable mechanical stress, and the on-and off-chip implementation of sensor, actuator, microwave, and energy supply components are addressed. INDEX TERMS Hybrid integrated circuits, thin film circuits, flexible electronics, micro assembly, multichip modules, chip scale packaging.

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“…The SG Si TFTs exhibit mobility of 600 cm 2 /Vs and 280 cm 2 /Vs for electrons and holes, respectively [23]. An operational amplifier was demonstrated with a DC gain of 55 dB and a cutoff frequency of 5.5 GHz for the SG TFTs with the 1.5 µm long gate enabled a low-noise RF amplifier operating 433 MHz with 12 dB gain [24].…”

Section: Tft Fabrication and Characteristicsmentioning

confidence: 99%

Single-Grain Si Thin-Film Transistors for Monolithic 3D-ICs and Flexible Electronics

Ishihara

Zhang

Trifunovic

et al. 2014

IEICE Trans. Electron.

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SUMMARYWe review our recent achievements in monolithic 3D-ICs and flexible electronics based on single-grain Si TFTs that are fabricated inside a single-grain with a low-temperature process. Based on pulsedlaser crystallization and submicron sized cavities made in the substrate, amorphous-Si precursor film was converted into poly-Si having grains that are formed on predetermined positions. Using the method called µ-Czochralski process and LPCVD a-Si precursor film, two layers of the SG Si TFT layers with the grains having a diameter of 6 µm were vertically stacked with a maximum process temperature of 550 • C. Mobility for electrons and holes were 600 cm 2 /Vs and 200 cm 2 /Vs, respectively. As a demonstration of monolithic 3D-ICs, the two SG-TFT layers were successfully implemented into CMOS inverter, 3D 6T-SRAM and single-grain lateral PIN photo-diode with in-pixel amplifier. The SG Si TFTs were applied to flexible electronics. In this case, the a-Si precursor was prepared by doctor-blade coating of liquid-Si based on pure cyclopentasilane (CPS) on a polyimide (PI) substrate with maximum process temperature of 350 • C. The µ-Czochralski process provided location-controlled Si grains with a diameter of 3 µm and mobilities of 460 and 121 cm 2 /Vs for electrons and holes, respectively, were obtained. The devices on PI were transferred to a plastic foil which can operate with a bending diameter of 6 mm. Those results indicate that the SG TFTs are attractive for their use in both monolithic 3D-ICs and flexible electronics.

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An Assessment of µ-Czochralski, Single-Grain Silicon Thin-Film Transistor Technology for Large-Area, Sensor and 3-D Electronic Integration

Cited by 22 publications

References 19 publications

(Invited) Single-Grain Germanium TFTs

(Invited) Single-Grain Germanium TFTs

Hybrid Systems-in-Foil—Combining the Merits of Thin Chips and of Large-Area Electronics

Single-Grain Si Thin-Film Transistors for Monolithic 3D-ICs and Flexible Electronics

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