An asymmetric hot carrier tunneling van der Waals heterostructure for multibit optoelectronic memory

Chen, Yuqian; Yu, Jun; Zhuge, Fuwei; He, Yuhui; Zhang, Qingfu; Shibata, Yu; Liu, Kailang; Li, Liang; Ma, Ying; Zhai, Tianyou

doi:10.1039/c9mh01923e

Cited by 45 publications

(47 citation statements)

References 51 publications

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“…As such, in this configuration a memory window is defined by the difference between programming‐state V TH and erase‐state V TH. [ 42,43 ] A maximum memory window of ≈38.94 V is calculated for power densities of 3 and 10 mW cm −2 during WRITE and ERASE operations, respectively. The cyclic repeatability of the optical WRITE and ERASE operations is assessed to ascertain the endurance of BP devices, as shown in Figure 1j,k.…”

Section: Figurementioning

confidence: 99%

Fully Light‐Controlled Memory and Neuromorphic Computation in Layered Black Phosphorus

et al. 2020

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Imprinting vision as memory is a core attribute of human cognitive learning. Fundamental to artificial intelligence systems are bioinspired neuromorphic vision components for the visible and invisible segments of the electromagnetic spectrum. Realization of a single imaging unit with a combination of in‐built memory and signal processing capability is imperative to deploy efficient brain‐like vision systems. However, the lack of a platform that can be fully controlled by light without the need to apply alternating polarity electric signals has hampered this technological advance. Here, a neuromorphic imaging element based on a fully light‐modulated 2D semiconductor in a simple reconfigurable phototransistor structure is presented. This standalone device exhibits inherent characteristics that enable neuromorphic image pre‐processing and recognition. Fundamentally, the unique photoresponse induced by oxidation‐related defects in 2D black phosphorus (BP) is exploited to achieve visual memory, wavelength‐selective multibit programming, and erasing functions, which allow in‐pixel image pre‐processing. Furthermore, all‐optically driven neuromorphic computation is demonstrated by machine learning to classify numbers and recognize images with an accuracy of over 90%. The devices provide a promising approach toward neurorobotics, human–machine interaction technologies, and scalable bionic systems with visual data storage/buffering and processing.

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Section: Figurementioning

confidence: 99%

Fully Light‐Controlled Memory and Neuromorphic Computation in Layered Black Phosphorus

et al. 2020

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“…Trapping phenomena are commonly due to processes including Fowler-Nordheim(FN) tunneling [38,39] or hot carrier injection. [40,41] Hence, to achieve high switching performance, including large memory windows and short transitions, high operating voltages are required to enhance these mechanisms. However, defect generation or large detrapping time constants from oxide layers in these cases limits the lifetime of these optical memories.…”

Section: Resultsmentioning

confidence: 99%

Heterojunction Channels in Oxide Semiconductors for Visible‐Blind Nonvolatile Optoelectronic Memories

Tai

Wang

Chang

et al. 2020

Adv Elect Materials

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based on silicon, these novel materials or architectures have the advantage of ultrahigh sensitivity, a large memory window, or a multi-level function. Unfortunately, these materials still remain in the research stage and require further work with fabrication or an improvement in fundamental knowledge for adoption in back/front end of line (B/FEOL) processes before commercialization can be achieved. Most of these memory devices are still not compatible with microelectronic device systems or practical applications due to high operating voltages, low storage capacity, or a material that has not yet been significantly characterized for commercialization. Therefore, a suitable solution for commercialization in optical communications is still a pressing concern. Amorphous indium-gallium-zinc-oxidethin-film transistors (a-InGaZnO TFTs) have been leading the display industry to new levels after the first demonstration from Hosono et al. in 2004. [18] Due to their outstanding electrical properties, ultra-low leakage current (≈10 −20 A), and an ideal carrier mobility (≈10 cm 2 V −1 s −1), InGaZnO-based displays are capable of delivering high resolution and low power consumption products. [19-23] Also, fabrication advantages, including room temperature deposition and massive area uniformity, have drawn interest for use in large-format and portable-flexible electronic displays. Apart from display products, InGaZnO-based Optoelectronic memory whose digital signals depend on electrical as well as optical sources have attracted tremendous attention recently due to their potential in applications, including optical communication systems, neural networks, and image correlation systems. In this work, metal-oxide semiconductors for use as optical memory devices are accomplished through a heterojunction channel layer which acts as a quantum confinement architecture confining electrons to the front channel. Compared to conventional memories, which rely on electron injections that cause hot electron degradation, the proposed device is based on a floating body effect. After irradiation, photo-excited carriers are separated under a lateral electrical field, and generated holes are left in the back channel, which facilitates data storage behavior. Beneficial characteristics include a memory window (≈4.6 V), a high on/off ratio (≈10 6), and low operating voltage (<20 V). Furthermore, photo-excited carriers are only generated when irradiated by ultraviolet light, leading to a visible-blind optical memory. A retention of more than 10 years and endurance cycle of more than 1000 cycles demonstrate its nonvolatile behaviors. This work provides a novel heterojunction channel layer architecture in disordered oxide semiconductors and provides a novel idea for a wide range of unipolar materials in future optoelectronic memory devices.

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“…The latest development in the electronic and optical memories based on 2DMCHs is summarized in Table 1 . [ 18,32,46–51,127,183–189 ]…”

Section: Emerging Novel Applicationsmentioning

confidence: 99%

Two‐Dimensional Metal Chalcogenide Heterostructures: Designed Growth and Emerging Novel Applications

Chen

et al. 2021

Adv Materials Inter

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There has been a renewed interest in 2D metal chalcogenide heterostructures (2DMCHs) in the context of their exceptional optoelectronic properties and potential for a wide variety of practical applications. However, the controllable synthesis of 2DMCHs remains a huge challenge. Recently, chemical vapor deposition (CVD) has been proposed to be an efficient way to realize high‐quality, large‐scale, and layer‐controllable 2D materials and has also shown high feasibility in 2DMCHs. Here, the latest controllable CVD growth strategies of 2DMCHs are introduced. The designed growth techniques mainly focus on three vital factors in CVD: source supply, mass transport, and substrate engineering. Then, the emerging novel applications of 2DMCHs are also systematically reviewed with particular attention to memory, infrared photodetector, and moiré superlattice, which have demonstrated significant progress in recent years. Finally, future opportunities and remaining challenges concerning the developments of 2DMCHs are presented.

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An asymmetric hot carrier tunneling van der Waals heterostructure for multibit optoelectronic memory

Abstract: Novel optoelectronic memory is fabricated using a van der Waals heterostructure of PtS2/h-BN/graphene with asymmetric hot carrier tunneling barriers.

Cited by 45 publications

References 51 publications

Fully Light‐Controlled Memory and Neuromorphic Computation in Layered Black Phosphorus

Fully Light‐Controlled Memory and Neuromorphic Computation in Layered Black Phosphorus

Heterojunction Channels in Oxide Semiconductors for Visible‐Blind Nonvolatile Optoelectronic Memories

Two‐Dimensional Metal Chalcogenide Heterostructures: Designed Growth and Emerging Novel Applications

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