An effective method to decrease dielectric loss of CaCu3Ti4O12 ceramics

Mu, Chunlai; Liu, Peng; He, Ying; Zhou, Jianping; Zhang, Huaiwu

doi:10.1016/j.jallcom.2008.04.040

Cited by 70 publications

(38 citation statements)

References 20 publications

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“…1 This dielectric material has a high value of permittivity over a wide temperature range, 2,3 which is desirable for electronic devices miniaturization. 4 In addition, the non-Ohmic behavior was observed by Chung et al, 5 showing the existence of insulating grain boundaries which could act as potential barriers, very similar to metal oxide varistors. Marques et al 6 identified the Schottky-type nature of the potential barrier in CCTO when they observed the dependence between oxygen partial pressure in sintering process and varistor behavior.…”

mentioning

confidence: 92%

The dielectric suppress and the control of semiconductor non-Ohmic feature of CaCu3Ti4O12 by means of tin doping

Ribeiro¹,

Araujo²,

Bueno³

2011

Applied Physics Letters

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In this work it was demonstrated that the addition of Sn on CaCu3Ti4O12 material improved non-Ohmic behavior by suppressing dielectric properties. It was noted that the improvement of the varistor characteristics, monitored by the increase in nonlinear coefficient, occurs with the disappearance of the grain dielectric relaxation process with concomitant decreasing of both dielectric constant and dielectric loss values. By forming a solid solution, Sn4+ was incorporated into CaCu3Ti4O12 matrix deforming the crystal lattice and restricting the formation of polaronic stacking faults. Thus, the dielectric relaxation due to polaronic defects is believed to be the origin of the huge dielectric properties disappearance. This framework is in agreement with the nanosized barrier layer capacitor model.

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mentioning

confidence: 92%

The dielectric suppress and the control of semiconductor non-Ohmic feature of CaCu3Ti4O12 by means of tin doping

Ribeiro¹,

Araujo²,

Bueno³

2011

Applied Physics Letters

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“…The giant dielectric constant materials have attracted many attentions since the discovery of CaCu 3 Ti 4 O 12 (CCTO) because of their greatly potential applications in the microelectronics [1][2][3][4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Dielectric properties of La1.75Ba0.25NiO4 ceramics prepared by spark plasma sintering

Song

Liu

et al. 2010

Journal of Alloys and Compounds

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“…a high dielectric permittivity (ε ) (up to 10 5 ), which is practically independent of frequency (from dc to 10 6 Hz) and temperature (between 100600 K). However, the high value of the dielectric loss (tan δ) of CCTO limits its applicability as a capacitor material [2,3].…”

Section: Introductionmentioning

confidence: 99%

A High-Energy Ball Milling as a Useful Technique for the Synthesis of CaCu₃Ti₄O₁₂Electroceramics

et al. 2014

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This paper shows that CaCu3Ti4O12 (CCTO) can be synthesized through the high-energy ball milling of CaO, CuO and TiO2 powders. The dielectric characterization of CCTO obtained mechanochemically as well as, for comparison, by a high-temperature method is presented. Moreover, it is illustrated that zirconium oxide in contrast to a metallic iron generated during milling processes improves the properties of CCTO in terms of ceramic capacitors.

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An effective method to decrease dielectric loss of CaCu3Ti4O12 ceramics

Cited by 70 publications

References 20 publications

The dielectric suppress and the control of semiconductor non-Ohmic feature of CaCu3Ti4O12 by means of tin doping

The dielectric suppress and the control of semiconductor non-Ohmic feature of CaCu3Ti4O12 by means of tin doping

Dielectric properties of La1.75Ba0.25NiO4 ceramics prepared by spark plasma sintering

A High-Energy Ball Milling as a Useful Technique for the Synthesis of CaCu₃Ti₄O₁₂Electroceramics

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An effective method to decrease dielectric loss of CaCu3Ti4O12 ceramics

Cited by 70 publications

References 20 publications

The dielectric suppress and the control of semiconductor non-Ohmic feature of CaCu3Ti4O12 by means of tin doping

The dielectric suppress and the control of semiconductor non-Ohmic feature of CaCu3Ti4O12 by means of tin doping

Dielectric properties of La1.75Ba0.25NiO4 ceramics prepared by spark plasma sintering

A High-Energy Ball Milling as a Useful Technique for the Synthesis of CaCu3Ti4O12Electroceramics

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A High-Energy Ball Milling as a Useful Technique for the Synthesis of CaCu₃Ti₄O₁₂Electroceramics