2013
DOI: 10.5121/vlsic.2013.4101
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An Efficient CNTFET Based 7-Input Minority Gate

Abstract: Complementary metal oxide semiconductor technology (CMOS) has been faced critical challenges in nanoscale regime. CNTFET (Carbon Nanotube Field effect transistor) technology is a promising alternative for CMOS technology. In this paper, we proposed a novel 7-input minority gate in CNTFET technology that has only 9 CNTFETs. Minority function is utilized in the voting systems for decision making and also it is used in data mining. This proposed 7-input minority gate is utilized less fewer transistors than the c… Show more

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Cited by 2 publications
(2 citation statements)
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“…Lithography limitations, large parametric variations, high power density are some of these critical challenges. To overcome these difficulties and challenges in sub-nanometer scale new technologies have emerged [2]. A carbon nano tube field-effect transistor (CNTFET) refers to a field-effect transistor that utilizes a single carbon nano tube or an array of carbon nanotubes as the channel material instead of bulk silicon in the traditional MOSFET structure.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…Lithography limitations, large parametric variations, high power density are some of these critical challenges. To overcome these difficulties and challenges in sub-nanometer scale new technologies have emerged [2]. A carbon nano tube field-effect transistor (CNTFET) refers to a field-effect transistor that utilizes a single carbon nano tube or an array of carbon nanotubes as the channel material instead of bulk silicon in the traditional MOSFET structure.…”
Section: Introductionmentioning
confidence: 99%
“…The static DCVS-based standard ternary gates (Inverter/ Buffer, AND/NAND, OR/NOR), which are fundamental components of every arithmetic or logic units, are proposed with the use of CNTFET technology [12]. Minority function is utilized in the voting systems for decision making and also it is used in data mining [13]. The threshold voltage of the intrinsic CNT channel can be approximated to be of first order as the half band gap is an inverse function of the diameter [14][15] Fig.…”
Section: Introductionmentioning
confidence: 99%