The integration of digital circuits has a tight relation with the scaling down of silicon technology. The continuous scaling down of the feature size of CMOS devices enters the nanoscale, which results in such destructive effects as short channel effects. Consequently, efforts to replace silicon technology with efficient substitutes have been made. The carbon nanotube fieldeffect transistor (CNTFET) is one of the most promising replacements for this purpose because of its essential characteristics. Various digital CNTFET-based circuits, such as standard logic cells, have been designed and the results demonstrate improvements in the delay and energy consumption of these circuits. In this paper, a new CNTFET-based 5-input XOR gate based on a novel design method is proposed and simulated using the HSPICE tool based on the compact SPICE model for the CNTFET at the 32-nm technology node. The proposed method leads to improvements in performance and device count compared to the conventional CMOS-style design.Keywords: Nanotechnology, carbon nanotube fieldeffect transistor, CNTFET, high-performance circuits, CNTFET-based inverter, exclusive-OR gate, XOR gate. Manuscript received Jan. 13, 2013; revised Apr. 2, 2013; accepted Apr. 5, 2013. Ronak Zarhoun (phone: +98 2129904195, r.zarhoon@mail.sbu.ac.ir), Mohammad H. Moaiyeri (h_moaiyeri@sbu.ac.ir), and Samira S. Farahani (sa.shirinabadi@mail.sbu.ac.ir) are with the Nanotechnology and Quantum Computing Laboratory, Shahid Beheshti University, G.C., Tehran, Iran.Keivan Navi (corresponding author, navi@sbu.ac.ir, knavi@uci.edu) is with the Quantum Computing Laboratory, Shahid Beheshti University, G.C., Tehran, Iran, and is also with the Department of Electrical Engineering and Computer Science, University of California, Irvine, Irvine, CA, USA. I. IntroductionNo one can imagine today's world without the influence and power of computer technology, which dominates many aspects of people's lives, from such simple details as cell phones to such important and critical projects as those in aeronautics. All computer-based technological improvements are possible through computational functions, which are made up of precise logic gates. Such logic gates as NOT, NAND, NOR, and XOR are the main building blocks of logical functions [1], [2]. Considering these gates, the XOR gate plays a significant role in computational processors with low-power purposes and arithmetic circuits [3], [4], such as full adder cells [5], [6]-[8], parity bit generators and parity checkers [9], multipliers such as the polynomial basis multiplier [10], and comparator circuits [8], [11], [12]. High-speed XOR gates are needed for summation of partial products in multiplier circuits, and they are also used in MUX modules in arithmetic circuits [12].The most famous application of the XOR gate is in coding processes and data encryption or decryption, especially in AES (Advanced Encryption Standard) [1], which is sufficiently used in data communication. In design testing, it is used in built-in self-test structures [...

Complementary metal oxide semiconductor technology (CMOS) has been faced critical challenges in nanoscale regime. CNTFET (Carbon Nanotube Field effect transistor) technology is a promising alternative for CMOS technology. In this paper, we proposed a novel 7-input minority gate in CNTFET technology that has only 9 CNTFETs. Minority function is utilized in the voting systems for decision making and also it is used in data mining. This proposed 7-input minority gate is utilized less fewer transistors than the conventional CMOS method which utilizes many transistors for implementing sum of products. By means of this proposed 7-input minority gate, a 4-input NAND gate can be implemented, which gets better the conventional design in terms of delay and energy efficiency and has much more deriving power at its output.

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The integration of digital circuits has a tight relation with the scaling down of silicon technology. The continuous scaling down of the feature size of CMOS devices enters the nanoscale, which results in such destructive effects as short channel effects. Consequently, efforts to replace silicon technology with efficient substitutes have been made. The carbon nanotube fieldeffect transistor (CNTFET) is one of the most promising replacements for this purpose because of its essential characteristics. Various digital CNTFET-based circuits, such as standard logic cells, have been designed and the results demonstrate improvements in the delay and energy consumption of these circuits. In this paper, a new CNTFET-based 5-input XOR gate based on a novel design method is proposed and simulated using the HSPICE tool based on the compact SPICE model for the CNTFET at the 32-nm technology node. The proposed method leads to improvements in performance and device count compared to the conventional CMOS-style design.