An efficient electron-beam-pumped semiconductor laser for the green spectral range based on II–VI multilayer nanostructures

Зверев, М. М.; Гамов, Н. А.; Peregoudov, D. V.; Studionov, V. B.; Zdanova, E. V.; Sedova, I. V.; Gronin, S. V.; Sorokin, Sergey; Иванов, С. В.; Kop’ev, P. S.

doi:10.1134/s1063782608120129

Cited by 11 publications

(6 citation statements)

References 8 publications

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“…1 Introduction The investigation of heterostructures based on wide gap II-VI semiconductors is important for their optoelectronic applications in blue-green semiconductor light emitting diodes and lasers [1,2]. These lasers remain essential for laser projection television, optical communications, laser navigation systems and many other applications.…”

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confidence: 99%

Cathodoluminescence of wide‐band‐gap II‐VI quaternary alloys

Shakhmin

Sedova

Sorokin

et al. 2010

Phys. Status Solidi (c)

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Cathodoluminescence has been applied to study 1‐μm‐thick Zn1‐xMgxSySe1‐y alloys grown by molecular beam epitaxy. The observed cathodoluminescence spectra show the main band transition at 2.9 eV and a broad defect band around 2.2 eV. The analysis of the band intensities at different electron‐beam current densities shows different saturation behaviour of the defect band intensities for the samples. The saturation intensity and the luminescence lifetime correlate with the defect luminescence intensity and concentration. This is the reason of luminescence colour changes in dependence on the electron‐beam current density. These results were applied to comparative evaluation of the luminescent defect density. A respective cathodoluminescence imaging was used for observation of structural defects in the surface plane and at the ZnMgSSe‐layer/GaAs‐buffer interface. It enables an express non‐destructive analysis of defect density in the layers and heterostuctures. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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confidence: 99%

Cathodoluminescence of wide‐band‐gap II‐VI quaternary alloys

Shakhmin

Sedova

Sorokin

et al. 2010

Phys. Status Solidi (c)

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“…More recently, researchers of the Moscow State Institute of Radio Engineering, Electronics and Automation (Russian Technological University) in collaboration with the Ioffe Institute in St. Petersburg developed a research program to demonstrate electron beam pumped green lasers using ZnSe-based separate confinement heterostructures in the transversal configuration [83][84][85][86][87][88]. Using a single CdSe quantum dot layer as emitting element (wavelength = 535 nm) embedded in a complex ZnMgSSe/ZnSSe/ZnSe waveguide, they reported a room-temperature lasing threshold as low as 0.4-0.5 A cm −2 at an acceleration voltage of 8-9 kV [85].…”

Section: Ii-vi Semiconductor Lasersmentioning

confidence: 99%

“…However, the design was not optimized in terms of conversion efficiency, since the maximum efficiency was obtained for an acceleration voltage around 17-21 V, i.e. with the electron beam penetrating more than 1 µm into the semiconductor, which was well beyond the waveguide core (0.2 µm top cladding + 0.2 µm waveguide core) [86]. This misalignment resulted in important carrier injection losses.…”

Section: Ii-vi Semiconductor Lasersmentioning

confidence: 99%

Electron beam pumped light emitting devices

Cuesta¹,

Harikumar²,

Monroy³

2022

J. Phys. D: Appl. Phys.

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Electron beam pumping is a promising technique to fabricate compact and efficient light emitters (lamps or lasers) in those spectral ranges where electrical injection is problematic due doping, transport and contacting issues. Interest in this technology has increased in recent years, particularly driven by the demand for ultraviolet sources and the difficulties in developing efficient AlGaN devices to cover the spectral range of 220-350 nm. The use of a highly energetic electron beam enables the semiconductor structure to be pumped without the need for doping or contacting. The active volume is defined by the accelerating voltage, which allows the homogeneous excitation of a large active volume. The efficiency of cathodoluminescent lamps can compete and even outperform LEDs in the deep ultraviolet window, and lasers can deliver high optical power (up to around 100 W). Here, we analyze the advantages and challenges of this technology platform, and discuss its potential applications.

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“…The minimum value of the room temperature (RT) threshold current density in electron beam, achieved in a transverse pumping geometry for ZnSe-based separate confinement heterostructure lasers with the active region based on single CdSe quantum dot (QD) sheets, has been recently reported to be as low as 0.4-0.5 A/cm 2 at the electron energy of 8-9 keV [2]. Multiple quantum well (MQW) laser structures with the similar design of each active layers demonstrated the quantum efficiency up to 8.5% and the peak output pulsed power of 12 W per facet at RT [3]. To increase the peak output power one can use both the larger laser active region, e.g.…”

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confidence: 98%

Green electron‐beam pumped laser arrays based on II–VI nanostructures

Зверев¹,

Иванов²,

Гамов³

et al. 2010

Physica Status Solidi (b)

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Room temperature electron-beam pumped (U ¼ 15-26 keV) green lasers and laser arrays based on multiple quantum well II-VI structures with an extended up to 2 mm waveguide have been studied. The maximum achieved output pulse power is as high as 31 and 630 W per facet from a single 0.24-mm-wide laser element at the cavity length of 0.4 mm and a laser array consisting of 26 elements, respectively. 1 Introduction Electron-beam pumped (EBP) green semiconductor lasers based on undoped II-VI-based structures can be used for numerous applications, such as projection television, optical navigation, location systems, medicine, etc. Sufficient progress in the development of EBP lasers has been achieved using semiconductor heterostructures as the laser active elements instead of bulk materials [1]. The minimum value of the room temperature (RT) threshold current density in electron beam, achieved in a transverse pumping geometry for ZnSe-based separate confinement heterostructure lasers with the active region based on single CdSe quantum dot (QD) sheets, has been recently reported to be as low as 0.4-0.5 A/cm 2 at the electron energy of 8-9 keV [2]. Multiple quantum well (MQW) laser structures with the similar design of each active layers demonstrated the quantum efficiency up to 8.5% and the peak output pulsed power of 12 W per facet at RT [3]. To increase the peak output power one can use both the larger laser active region, e.g. an extended MQW waveguide, and the multielement laser array. This paper reports on design and studies of MQW ZnSe-based lasers and laser arrays pumped by a pulsed electron beam. We have used a homemade electron gun with the maximum total current of an electron beam as high as 600 mA at the electron energy below 26 keV. In contrast to our previous studies [1,2], this gun enables one to pump the laser array of several

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An efficient electron-beam-pumped semiconductor laser for the green spectral range based on II–VI multilayer nanostructures

Cited by 11 publications

References 8 publications

Cathodoluminescence of wide‐band‐gap II‐VI quaternary alloys

Cathodoluminescence of wide‐band‐gap II‐VI quaternary alloys

Electron beam pumped light emitting devices

Green electron‐beam pumped laser arrays based on II–VI nanostructures

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