“…Other approach using a bias-flip rectifier with an inductor was presented in the range of µW, which is greater than 4X power extraction compared to conventional full bridge rectifier. 92 However, due to the fundamental limitation of diode type rectification, built-in voltage in diode, to minimize the voltage drop to diminish the rectified output voltage from rectifying circuit in diode is the critical issue. At room temperature, the built-in voltage of Si and Ge based P-N junction diodes are about 0.7 V and 0.4 V, 93 respectively.…”