2020
DOI: 10.1109/tpel.2019.2929113
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An Electrical Transient Model of IGBT-Diode Switching Cell for Power Semiconductor Loss Estimation in Electromagnetic Transient Simulation

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Cited by 34 publications
(18 citation statements)
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“…Examples and Applications: Switching models are commonly employed to estimate switching losses [37], determine methods to reduce switching losses [38]- [40], or develop modulation strategies that reduce output harmonics and/or switching losses [41]- [45]. Similarly, in [46], a switching model of a wind turbine was used for testing modulation control strategies for fast tracking of large changes in wind speed.…”
Section: A Switching Modelsmentioning
confidence: 99%
“…Examples and Applications: Switching models are commonly employed to estimate switching losses [37], determine methods to reduce switching losses [38]- [40], or develop modulation strategies that reduce output harmonics and/or switching losses [41]- [45]. Similarly, in [46], a switching model of a wind turbine was used for testing modulation control strategies for fast tracking of large changes in wind speed.…”
Section: A Switching Modelsmentioning
confidence: 99%
“…A detailed overview of the modeling techniques and different complexity levels of IGBT models can be found in [153,154]. Although several physical and behavioral models of the coupled MOSFET-BJT structure of an IGBT device are presented in the literature [145,146,[155][156][157][158][159][160][161][162][163][164][165][166][167], the parameter extraction procedures ask for simultaneous fitting to both static and dynamic device measurement data, which makes the modeling of IGBTs a rather complex task even for major manufacturers. Quite a few of them provide models of some IGBT devices (e.g., [165,166]) but the accuracy and stability of these models differ and the selection of an appropriate model for system level EMC simulations is still challenging.…”
Section: Power Semiconductor Modelsmentioning
confidence: 99%
“…The processed test-data can be surface fitted to obtain 3D plot of and against , and/or + . These can serve as a loss data library for PE converter design calculations and can be linked with PSD models in transient simulation software to obtain more practical simulation data [19].…”
Section: ) Switching Energy Loss Data Librarymentioning
confidence: 99%
“…Moreover, a device level study of a PSD also helps design engineers to predict its dynamic performance in a target application. A double pulse test (DPT) is a widely accepted method to extract the switching parameters of PSDs [1], [14]- [19]. In a typical DPT cycle, key parameters such as device voltage, current, case temperature, gate-drive resistances are varied and the switching performance of a DUT is observed and recorded in an oscilloscope.…”
Section: Introductionmentioning
confidence: 99%
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