An electronic synapse memristor device with conductance linearity using quantized conduction for neuroinspired computing

Abstract

An electrochemical metallization memristor based on Zr0.5Hf0.5O2 film and an active Cu electrode with quantum conductance and neuromorphic behavior has been reported in this work.

Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO2/Al2O3/HfO2 Based Memristor on ITO Electrode

“…To emulate the Hebbian learning of spiking neural networks (SNN), we focus on mimicking the spike-timing-dependent plasticity (STDP) learning rule in the tri-layer TaN/HfO 2 /Al 2 O 3 /HfO 2 /ITO memristor, having been employed to simulate synapse functionality [ 50 ]. This learning rule depends on the relative time difference (Δt) of a set of spikes related to the pre-synaptic and post-synaptic neurons [ 51 ]. Design of the pre-spike, post-spike and consequent effective pulse applied to the synapse for time-division multiplexing (TDM) approach are shown in Figure 6 e. Using this pulse sequence, the obtained STDP characteristics for synaptic learning rules in the tri-layer RRAM device was employed using the TDM approach, as shown in Figure 6 d [ 50 ].…”

Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching

“…Also half-integer states of G 0 are detectable, as recently reported for RRAM devices based on hafnium oxide, [20] as well as in a Cu/Zr 0.5 Hf 0.5 O 2 /Pt ECM device (only in the reset process). [49] By tuning the oxygen content, the amount of pre-existing oxygen vacancies in the functional layer can be fine-tuned, and by this, the dynamic creation and annihilation process of the conducting filament. By reducing the oxygen contents, the operation voltages can be reduced, and the electric field-driven oxygen migration promoted.…”

Fundamentals and SPICE Implementation of the Dynamic Memdiode Model for Bipolar Resistive Switching Devices

“…For a complete review about conductance quantization effects in RS devices see Refs. [23][24][25][26][27][28][29][30][31]. From the electrical viewpoint, (6) can be envisaged as two opposite biased diodes (see Fig.…”