Fundamentals and SPICE Implementation of the Dynamic Memdiode Model for Bipolar Resistive Switching Devices

Miranda, E.; Suñé, J.

doi:10.36227/techrxiv.12479426

Cited by 2 publications

(2 citation statements)

References 57 publications

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“…These fingerprints indicate that both the amplitude and frequency effects are interrelated, i.e., the ion/vacancy displacement rates within the insulating layer and the formation and rupture of the CF [50][51][52]. A model capable of satisfying these constraints was recently proposed by Miranda [53], considering an extension of the conventional memristive approach suggested by Prof. Chua. This proposal again involves a system of two coupled equations, one for the electron transport (transport equation, TE) and a second equation for the memory state of the device (memory equation, ME).…”

Section: Dynamic Memdiode Modelmentioning

confidence: 99%

SPICE Simulation of RRAM-Based Cross-Point Arrays Using the Dynamic Memdiode Model

et al. 2021

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We thoroughly investigate the performance of the Dynamic Memdiode Model (DMM) when used for simulating the synaptic weights in large RRAM-based cross-point arrays (CPA) intended for neuromorphic computing. The DMM is in line with Prof. Chua’s memristive devices theory, in which the hysteresis phenomenon in electroformed metal-insulator-metal structures is represented by means of two coupled equations: one equation for the current-voltage characteristic of the device based on an extension of the quantum point-contact (QPC) model for dielectric breakdown and a second equation for the memory state, responsible for keeping track of the previous history of the device. By considering ex-situ training of the CPA aimed at classifying the handwritten characters of the MNIST database, we evaluate the performance of a Write-Verify iterative scheme for setting the crosspoint conductances to their target values. The total programming time, the programming error, and the inference accuracy obtained with such writing scheme are investigated in depth. The role played by parasitic components such as the line resistance as well as some CPA’s particular features like the dynamical range of the memdiodes are discussed. The interrelationship between the frequency and amplitude values of the write pulses is explored in detail. In addition, the effect of the resistance shift for the case of a CPA programmed with no errors is studied for a variety of input signals, providing a design guideline for selecting the appropriate pulse’s amplitude and frequency.

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Section: Dynamic Memdiode Modelmentioning

confidence: 99%

SPICE Simulation of RRAM-Based Cross-Point Arrays Using the Dynamic Memdiode Model

et al. 2021

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“…As mentioned in the Introduction, the one-way sensitivity analysis was applied to the QMM model [7]. This model describes the conduction characteristics of bipolar resistive switching devices.…”

Section: The Quasi-static Memdiode Modelmentioning

confidence: 99%

One-way Sensitivity Analysis of the Quasi-static Memdiode Model for RRAM Devices

Salvador

González

Campabadal

et al. 2021

2021 IEEE 32nd International Conference on Microelectronics (MIEL)

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In this work, we assess the impact that changes in the parameters of the quasi-static memdiode model (QMM) for RRAM devices will have on the simulated conduction characteristics. Sensitivity analysis is recognized as the most important technique for identifying which parameters are key drivers of the model's results. The model's reference parameters are extracted first from a typical (median) experimental I-V curve of an electroformed HfO2-based metal-insulator-metal (MIM) structure. Then one parameter is changed at a time (so-called univariate or one-way analysis) in the LTSpice script and the variation of some selected observables recorded. Special attention is paid to the voltage span-induced sensitivity effect.

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Fundamentals and SPICE Implementation of the Dynamic Memdiode Model for Bipolar Resistive Switching Devices

Cited by 2 publications

References 57 publications

SPICE Simulation of RRAM-Based Cross-Point Arrays Using the Dynamic Memdiode Model

SPICE Simulation of RRAM-Based Cross-Point Arrays Using the Dynamic Memdiode Model

One-way Sensitivity Analysis of the Quasi-static Memdiode Model for RRAM Devices

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