2021
DOI: 10.3389/fphy.2021.735021
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SPICE Simulation of RRAM-Based Cross-Point Arrays Using the Dynamic Memdiode Model

Abstract: We thoroughly investigate the performance of the Dynamic Memdiode Model (DMM) when used for simulating the synaptic weights in large RRAM-based cross-point arrays (CPA) intended for neuromorphic computing. The DMM is in line with Prof. Chua’s memristive devices theory, in which the hysteresis phenomenon in electroformed metal-insulator-metal structures is represented by means of two coupled equations: one equation for the current-voltage characteristic of the device based on an extension of the quantum point-c… Show more

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Cited by 8 publications
(8 citation statements)
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“…which well describes the combined action of two physical mechanisms (generation/rupture and evolution of the CF). The solid lines of figure 10(a) represent this equation for the set and Interestingly, the initial CF generation and destruction phases are consistent with the predictions of the DMM [46,47], which considers the device memory state as a function of the electrical stimulus.…”
Section: Summary and Modelingsupporting
confidence: 71%
“…which well describes the combined action of two physical mechanisms (generation/rupture and evolution of the CF). The solid lines of figure 10(a) represent this equation for the set and Interestingly, the initial CF generation and destruction phases are consistent with the predictions of the DMM [46,47], which considers the device memory state as a function of the electrical stimulus.…”
Section: Summary and Modelingsupporting
confidence: 71%
“…Assuming an inverted parabolic potential barrier for the constriction's bottleneck (scatterer), T(E) is expressed as: Many of these models almost exclusively focus on the popular quasi-static, pinched I-V loop, ignoring the associated time-related dependencies. However, the latter has special relevance when considering real case application scenarios such as those described in [19], where the programming and reading of the device is made in terms of voltage pulses of varying frequency/duty cycle. In this regard, we aim to report the fundamentals and the SPICE implementation of a revised Dynamic Memdiode Model (DMM) for bipolar RS devices capable of incorporating the time-related dependencies, as well as the guidelines for its usage.…”
Section: Current-voltage Characteristicmentioning
confidence: 99%
“…In this regard, we aim to report the fundamentals and the SPICE implementation of a revised Dynamic Memdiode Model (DMM) for bipolar RS devices capable of incorporating the time-related dependencies, as well as the guidelines for its usage. Since this new version incorporates a dynamic balance equation for the memory state and a higher level of details in terms of modelling accuracy, we consider that it is a breakthrough with respect to the previous models proposed by our group: the Quasi-static Memdiode Model (QMM) [20][21][22] and a first version of the DMM [19]. The first one relies on the double-diode circuit controlled by the Krasnosel'skii-Pokrovskii hysteresis operator [23].…”
Section: Current-voltage Characteristicmentioning
confidence: 99%
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“…This procedure was successfully used to evaluate the accuracy, power dissipation, latency and other figures-of-merit of hardware-based neural networks during inference 250 , 253 . It also allows to study in detail the weight update process 254 and the mitigation of stuck-at-faults 255 . To speed up the simulation process, we rely for this implementation in the FastSPICE simulator from the Synopsys Design Suite, although it is perfectly compatible with standard H-SPICE.…”
Section: Simulation Of Memristive Annsmentioning
confidence: 99%