An ellipsometric method for the determination of the dielectric tensor of an optically uniaxial material suited for in-situ measurements

Xu, Weiliang

doi:10.1016/s0040-6090(00)01861-7

Cited by 5 publications

(3 citation statements)

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“…The corresponding components of the waves reflected from the film are denoted as E p ′ and E s ′, respectively. In general, for anisotropic film the p-s polarization uncoupling condition is broken and the incident and reflected waves are related by 2×2 reflection matrix as follows [12][13][14][15][16]: where the subscripts "ps" and "sp" denote s-wave converted to p-wave and p-wave converted to s-wave, respectively (polarization conversion), whereas "pp" and "ss" represent p-wave reflected as p-wave and s-wave reflected as s-wave.…”

Section: Foundations Of the Proposed Methodsmentioning

confidence: 99%

“…It is rather difficult task that can be solved by numerical fitting the measured Δ and Ψ angles data with an appropriate model [15,16].…”

Section: Foundations Of the Proposed Methodsmentioning

confidence: 99%

“…This method explores the fact that off-diagonal elements r ps and r ps are appreciably smaller than diagonal elements r pp and r ss [12][13][14][15][16]. As a result, in general, in case of s(p)-linear polarized incident wave the reflected wave will be elliptically polarized, but the ellipse of polarization will be strongly elongated and its major axis will have some small angle with the s(p)-direction.…”

Section: Foundations Of the Proposed Methodsmentioning

confidence: 99%

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Polarization conversion effect in obliquely deposited SiOx films

Sopinskyy¹

2011

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Structural anisotropy of the SiO x films and light emitting nanostructures, prepared by oblique deposition of silicon monoxide in vacuum, has been studied using the polarization conversion (PC) effect. For this purpose, a simple method of PC investigation with usage of a standard null-ellipsometer is proposed and tested. This method is based on the analysis of the azimuthal angle dependence of the offdiagonal elements of the Jones matrix. The electron microscopy study shows that obliquely deposited SiO x SiO Si -nc −x films have a porous (column-like) structure with the column diameter and inclination depending on the deposition angle. Polarimetric investigations revealed that both in-plane and out-of-plane anisotropy was present, which is associated with the columnar growth. The correlation between the PC manifestations and the scanning electron microscopy results is analyzed. It was found that the tilt angle of columns in obliquely deposited SiO x is smaller than that predicted by the "tangent rule" and "cosine rule" models, and depends on the crystallographic orientation of Si substrate. It is concluded that the proposed method is effective non-destructive express technique for the structural characterization of obliquely deposited films.

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