An Embedded 200 GHz Power Amplifier with 9.4 dBm Saturated Power and 19.5 dB Gain in 65 nm CMOS

Bameri, Hadi; Momeni, Omeed

doi:10.1109/rfic49505.2020.9218441

Cited by 19 publications

(8 citation statements)

References 4 publications

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“…The validity of the Rollett condition [11], assessed here via μ, requires that the open loop transfer functions have no poles in the right half-plane (RHP) [12]. Prior work on gain-boosting [4], [5], [6], [7] tacitly assumes that the Rollett criterion is sufficient to demonstrate the stability of a 2-port, whose transfer functions have no poles in the RHP, embedded in a passive reciprocal 4-port. We find the validity of that approach unclear and therefore must assess the open loop stability of the system.…”

Section: B Stability Verificationmentioning

confidence: 99%

“…Furthermore, allowing for embedding networks enlarges the design space to reduce passive component loss in matching networks. Approaches have been explored in recent CMOS work using cross-coupled neutralization for high PAE CMOS gain cells [4] and employing gain-plane techniques [5], [6], [7]. This earlier work requires matching networks to be designed after identifying the gainboosting network as illustrated in Fig.…”

Section: Introductionmentioning

confidence: 99%

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Coupled Embedding Networks for 7-dB Gain-per-Stage at 130–140 GHz in a 20-dBm Gallium Nitride Power Amplifier

Malley

Buckwalter

2022

IEEE J. Microw.

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We propose a coupled embedding network (CEN) as a portable, robust design technique to simultaneously introduce gain boosting and loadline matching in millimeter-wave power (mm-wave) amplifiers (PAs). The approach uses directional couplers as an abstraction for the embedding network and produces straightforward design equations to achieve optimal input-stability margins for any specified gain. We demonstrate the design process and implementation using a 40-nm Gallium Nitride (GaN) process technology through simulated and measured performance of the PA with and without the embedding network. The output power is greater than 20 dBm and remains above 18 dBm over an 8 GHz bandwidth. Peak power added efficiency (PAE) is 6.5%. The 3-stage PA achieves 21 dB of gain at 137 GHz offering 7.1-dB gain per device. The measured gain is 8 dB higher than the common-emitter design with the same number of stages. To our knowledge, this is the highest gain per stage for a GaN PA in D-band.

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Section: B Stability Verificationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Coupled Embedding Networks for 7-dB Gain-per-Stage at 130–140 GHz in a 20-dBm Gallium Nitride Power Amplifier

Malley

Buckwalter

2022

IEEE J. Microw.

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“…While device unilaterization can provide device power gain It is also interesting to note that selected circuit designs and topologies actually can allow amplifiers to operate close to the f max of the technologies. Examples include common-base PAs using InP devices leveraging the intrinsic InP device behaviors [50] or common-source amplifiers with narrow-band embedding feedback for device gain boosting up-to 4U, where U is the device Mason's Unilateral Power Gain [51] (Fig. 8).…”

Section: Device Technologiesmentioning

confidence: 99%

Millimeter-Wave Power Amplifier Integrated Circuits for High Dynamic Range Signals

2021

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The next-generation 5G and beyond-5G wireless systems have stimulated a substantial growth in research, development, and deployment of mm-Wave electronic systems and antenna arrays at various scales. It is also envisioned that large dynamic range modulation signals with high spectral efficiency will be ubiquitously employed in future communication and sensing systems. As the interface between the antennas and transceiver electronics, power amplifiers (PAs) typically govern the output power, energy efficiency, and reliability of the entire wireless systems. However, the wide use of high dynamic range signals at mm-Wave carrier frequencies substantially complicates the design of PAs and demands an ultimate balance of energy efficiency and linearity as well as other PA performances. In this review paper, we will first introduce the system-level requirements and design challenges on mm-Waves PAs due to high dynamic range signals. We will review advanced active load modulation architectures for mm-Wave PAs and power devices. We will then introduce recent advances in mm-Wave PA technologies and innovations with several design examples. Special design considerations on mm-Wave PAs for phased array MIMOs and high mm-Wave frequencies will be outlined. We will also share our vision on future technology trends and innovation opportunities.INDEX TERMS 5G, 6G, dynamic range, energy efficiency, integrated circuits, millimeter-wave, mobile communication, OFDM, peak to average power ratio (PAPR), power amplifier, quadrature amplitude modulation (QAM). I. INTRODUCTION

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“…Silicon technologies have to date only offered very limited power above 200 GHz. Recent work on Gmax-boosted approaches has pushed the output power towards 10 dBm with limited efficiency [22].…”

Section: Theoretical Comparisons Against Published Workmentioning

confidence: 99%

Fundamental limits of high-efficiency silicon and compound semiconductor power amplifiers in 100-300 GHz bands

Buckwalter¹,

Rodwell²,

Ning³

et al. 2021

ITU-J FET

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This paper reviews the requirements for future digital arrays in terms of power amplifier requirements for output power and efficiency and the device technologies that will realize future energy-efficient communication and sensing electronics for the upper millimeter-wave bands (100-300 GHz). Fundamental device technologies are reviewed to compare the needs for compound semiconductors and silicon processes. Power amplifier circuit design above 100 GHz is reviewed based on load line and matching element losses. We present recently presented class-A and class-B PAs based on a InP HBT process that have demonstrated record efficiency and power around 140 GHz while discussing circuit techniques that can be applied in a variety of integrated circuits.

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An Embedded 200 GHz Power Amplifier with 9.4 dBm Saturated Power and 19.5 dB Gain in 65 nm CMOS

Cited by 19 publications

References 4 publications

Coupled Embedding Networks for 7-dB Gain-per-Stage at 130–140 GHz in a 20-dBm Gallium Nitride Power Amplifier

Coupled Embedding Networks for 7-dB Gain-per-Stage at 130–140 GHz in a 20-dBm Gallium Nitride Power Amplifier

Millimeter-Wave Power Amplifier Integrated Circuits for High Dynamic Range Signals

Fundamental limits of high-efficiency silicon and compound semiconductor power amplifiers in 100-300 GHz bands

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