An emission stable vertical air channel diode by a low-cost and IC compatible BOE etching process

Liu, Meng; Liang, Songtai; Shi, Dongfang; Yang, Siyuan; Lei, Yu; Li, Tie; Wang, Yuelin

doi:10.1039/d0nr08997d

Cited by 18 publications

(10 citation statements)

References 31 publications

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“…The electron affinity of GaN, in particular, can be reduced further by doping or altering the alloy component, with a minimum value of about 2.37 eV. [24] Besides, when a high electric field is applied, the strong polarization within the Vertical diode [19] Si BOE 80 1.08 1.16…”

Section: Electrical Performance and Operating Mechanisms Of The Gan Nacdmentioning

confidence: 99%

Fast Response GaN Nanoscale Air Channel Diodes with Highly Stable 10 mA Output Current toward Wafer‐Scale Fabrication

et al. 2023

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Nanoscale air channel transistors (NACTs) have received significant attention due to their remarkable high-frequency performance and high switching speed, which is enabled by the ballistic transport of electrons in sub-100 nm air channels. Despite these advantages, NACTs are still limited by low currents and instability compared to solid-state devices. GaN, with its low electron affinity, strong thermal and chemical stability, and high breakdown electric field, presents an appealing candidate as a field emission material. Here, a vertical GaN nanoscale air channel diode (NACD) with a 50 nm air channel is reported, fabricated by low-cost IC-compatible manufacturing technologies on a 2-inch sapphire wafer. The device boasts a record field emission current of 11 mA at 10 V in the air and exhibits outstanding stability during cyclic, long-term, and pulsed voltage testing. Additionally, it displays fast switching characteristics and good repeatability with a response time of fewer than 10 ns. Moreover, the temperature-dependent performance of the device can guide the design of GaN NACTs for applications in extreme conditions. The research holds great promise for large current NACTs and will speed up their practical implementation.

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Section: Electrical Performance and Operating Mechanisms Of The Gan Nacdmentioning

confidence: 99%

Fast Response GaN Nanoscale Air Channel Diodes with Highly Stable 10 mA Output Current toward Wafer‐Scale Fabrication

et al. 2023

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“…Generally, device structures are classified into planar or vertical types, depending on the difference in vacuum channel morphology [ 6 , 7 ]. In previous reports, no dielectric layer between the gate and channel in vertical-type NVCTs were included, so the electric field in the channel could be effectively modulated by the gate [ 7 , 8 , 9 , 10 , 11 ]. However, it also leads to the gate current leakage problem, which cannot be fundamentally solved.…”

Section: Introductionmentioning

confidence: 99%

Structure Optimization of Planar Nanoscale Vacuum Channel Transistor

Lin

Liu

et al. 2023

Micromachines

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Due to its unique structure, discoveries in nanoscale vacuum channel transistors (NVCTs) have demonstrated novel vacuum nanoelectronics. In this paper, the structural parameters of planar-type NVCTs were simulated, which illustrated the influence of emitter tip morphology on emission performance. Based on simulations, we successfully fabricated back-gate and side-gate NVCTs, respectively. Furthermore, the electric properties of NVCTs were investigated, showing the potential to realize the high integration of vacuum transistors.

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“…Historically, vacuum tubes were the primary components used in electronics until being gradually replaced by solid-state electronics which have the advantages of integration, miniaturization, power efficiency, and low cost . Recently, the emergence of micro-/nanoscale manufacturing technologies has led to a resurgence of interest in vacuum electronics, resulting in the development of a novel device known as nanoscale air channel device (NACD). , The critical channel length of the NACD, achieved using technologies such as electron beam lithography (EBL), , focused ion beam (FIB) etching, , electro-forming, buffered oxide etch (BOE), , and so forth, is close to or less than the mean free path (MFP) (≈68 nm) of air at room temperature and pressure (RTP). This enables the electrons to be transported ballistically without scattering in the air channel.…”

Section: Introductionmentioning

confidence: 99%

Radiation Immune-Planar Two-Terminal Nanoscale Air Channel Devices toward Space Applications

Fan,

Zhao,

Chen

et al. 2023

ACS Appl. Nano Mater.

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In space applications, electronics must function while being strongly radiated. In this work, the radiation hardness property of the planar two-terminal nanoscale air channel device (NACD), which is a device of vacuum electronics, was demonstrated. Specifically, the total ionizing dose (TID) effect and single-event effects (SEEs) on the NACD were investigated. Xray and pulse laser were utilized as the sources of TID radiation and SEE radiation, respectively. No significant degradation was observed after 1 Mrad(Si) X-ray radiation, and no single-event transient phenomenon was detected at the pulse laser energy up to 5 nJ. Additionally, the physical mechanism of radiation hardness in the NACD was illustrated by theoretical analysis and finite element simulation. Taken together, the proposed work shows that the radiation hardness property of the NACD may have a prospect in deep space and nuclear energy applications.

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An emission stable vertical air channel diode by a low-cost and IC compatible BOE etching process

Abstract: Nanoscale air/vacuum channel devices have shown great potential in extreme environments, high speed and low power consumption applications. Progress in fabrication, structure and material optimization keeps emerging. However, it remains...

Cited by 18 publications

References 31 publications

Fast Response GaN Nanoscale Air Channel Diodes with Highly Stable 10 mA Output Current toward Wafer‐Scale Fabrication

Fast Response GaN Nanoscale Air Channel Diodes with Highly Stable 10 mA Output Current toward Wafer‐Scale Fabrication

Structure Optimization of Planar Nanoscale Vacuum Channel Transistor

Radiation Immune-Planar Two-Terminal Nanoscale Air Channel Devices toward Space Applications

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