An empirical model for dielectric constant and electronic polarizability of binary (ANB8−N) and ternary (ANB2+NC27−N) tetrahedral semiconductors

Correlation study of optical, mechanical and thermal properties of BAs material and its experimental energy gap

“…Our calculated value of αp is listed also in Table 3. As can be seen from Table 3, my obtained value (3.06 Å 3 ) of αp of BAs compound is slightly lower than the value 4.08 Å 3 of Verma et al [4], the values 4.05 -4.51 Å 3 reported by Shaileshkumar [29], and the value 4.41 Å 3 reported in Ref. [30].…”

“…The correct value of the nearest neighbor distance for boron arsenide semiconductor becomes (d = 2.07 Å) [31], which gives a value αp = 4.25 Å 3 . This later is in general slightly higher than the value (αp = 4.08 Å 3 ) quoted by Verma et al [4].…”

“…[30]. It is important to note that the value (αp = 4.08 Å 3 ) obtained by Verma et al [4] is not precise, because the authors of Ref. [4] used the value (d = 2.04 Å) as nearest neighbor distance for BAs.…”

“…It is important to note that the value (αp = 4.08 Å 3 ) obtained by Verma et al [4] is not precise, because the authors of Ref. [4] used the value (d = 2.04 Å) as nearest neighbor distance for BAs. The exact value of the nearest neighbor distance of BAs semiconductor can be deduced from the experimental lattice parameter (a = 4.777 Å) [3], [35].…”

“…Yadav et al [2] used the plasma oscillation theory of solids formalism to study the high-frequency refractive index, optical susceptibility, electronic polarizability and crystal ionicity of some cubic zincblende and wurtzite type structured binary compounds. In order to study the dielectric constant and electronic polarizability of some binary and ternary tetrahedral materials, Verma et al [4] proposed some efficacy models. In our very recent work [5], a quasi-linear relationship was obtained between the high-frequency and static dielectric constants in some II-VI and III-V materials.…”