Scaling of metal‐oxide‐semiconductor field‐effect transistors (MOSFET) is hitting fundamental limits due to power issues. In this article, an alternative transistor concept, the tunnel FET (TFET), is discussed, which employs quantum mechanical band‐to‐band tunneling to reduce power consumption. The main operating principle is explained, followed by a discussion of different modeling approaches. Next, the main performance challenges are presented. Different options to overcome these challenges are discussed. These options include a different material choice and alternative implementations, including dopant pockets, improved gate configurations, and strain. Specific considerations for using TFET in a circuit are highlighted. The article concludes with an overview of experimental realizations.