1996
DOI: 10.1109/16.485667
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An experimental and numerical study on the forward biased SOA of IGBTs

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Cited by 76 publications
(16 citation statements)
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“…In the case where is low, is also low so the effective potential over the e-b junction is high, for example 0.5 V. In this situation the current flowing through the junction at the critical point is obviously much too low to create a flatband situation, which has sometimes been suggested to be the situation necessary for inducing thermal runaway [29], [30]. Since is almost independent of , it can be concluded that it is the very high rate of current increase with increasing temperature at the critical point, and not a drastic reduction of the potential across the e-b junction, that is essential for thermal instability.…”
Section: Discussionmentioning
confidence: 99%
“…In the case where is low, is also low so the effective potential over the e-b junction is high, for example 0.5 V. In this situation the current flowing through the junction at the critical point is obviously much too low to create a flatband situation, which has sometimes been suggested to be the situation necessary for inducing thermal runaway [29], [30]. Since is almost independent of , it can be concluded that it is the very high rate of current increase with increasing temperature at the critical point, and not a drastic reduction of the potential across the e-b junction, that is essential for thermal instability.…”
Section: Discussionmentioning
confidence: 99%
“…Therefore, an internal physical failure mechanism analysis is necessary. In the literature, some studies are available on Planar IGBTs [4][5][6][7][8][9], but very few descriptions of the internal physical parameters of the Punch Through Trench IGBT during such failures can be found [10][11][12]. In this paper, 1D and 2D simulations of the internal behaviour of a Punch Through Trench IGBT are investigated.…”
Section: Introductionmentioning
confidence: 99%
“…Hagino et al [6] have studied the short-circuit on improved IGBT structures and observed a failure caused by impact ionisation for high supply voltages. Trivedi et al [7] have also pointed out the role of impact ionisation on the failure, but for unusual thermal boundary conditions.…”
Section: Introductionmentioning
confidence: 99%