2007 International Semiconductor Device Research Symposium 2007
DOI: 10.1109/isdrs.2007.4422357
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An experimental method allowing quantifying and localizing failed cells of an EEPROM CAST after a retention test.

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Cited by 3 publications
(7 citation statements)
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“…Specially the injection current and the associated modeling are of a crucial interest to evaluate its performance and predict the cell behavior [2]. Classically high temperature studies are applied to reliability analysis [7]. As a matter of fact, new applications, such as automotive, imply new product requirements.…”
Section: Introductionmentioning
confidence: 99%
“…Specially the injection current and the associated modeling are of a crucial interest to evaluate its performance and predict the cell behavior [2]. Classically high temperature studies are applied to reliability analysis [7]. As a matter of fact, new applications, such as automotive, imply new product requirements.…”
Section: Introductionmentioning
confidence: 99%
“…In this case of moderate stress, measurements on isolated cells show that the transcharacteristic shape (particularly the under threshold slope) is not significantly affected [13]. So, in the model described in the previous section, the same i 0 (v) shape can be used for both virgin and stressed (cycled) CAST.…”
Section: Link With the Experimental Quantitiesmentioning
confidence: 94%
“…The latter could be found by different inverse resolutions of Gaussian deconvolution, for instance by extraction of statistical parameters [7,9] or by a Gaussian deconvolution procedure as classically done in a medical device [10,11]. In order to avoid the extraction of the intrinsic part of the curve, we have recently proposed two non-computing methods to estimate the number of extrinsic cells in an EEPROM CAST [12,13]. The first method which is experimental and visual is based on the EMMI technique [14].…”
Section: Classical Exploitation Of Experimental Cast Characteristicsmentioning
confidence: 99%
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“…As previously detailed in Eq. (1), charge loss phenomenon is directly linked to electrons leaking from the floating gate, decreasing the total number of stored electrons and so inducing a progressive data loss [6][7][8]. In order to improve this reliability criterion, two major ways can be followed.…”
Section: Introductionmentioning
confidence: 99%