An Extraction Method for the Parasitic Capacitance of the Photovoltaic Module Based on the Oscillation of the Leakage Current

Wang, Jia‐Ning; Xun, Yuanwu; Yu, Shaolin

doi:10.1109/pedg.2019.8807594

Cited by 4 publications

(5 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…By changing the original connection mode of the circuit terminals, we can apply different two-port S-parameter measurements. To extract the values of all parasitic components of the halfbridge circuit, three different measurements of different connection setups need to be performed: Setup1: Port 1 (1,3,4), Port 2(2), Ref (5) As shown in FIGURE.5, we connect terminal 1, 3, and 4 as port 1, and treat terminal 2 as port 2. Moreover, terminal 5 is regarded as a reference and then perform S-parameter measurements with VNA.…”

Section: Cmeasure Setupmentioning

confidence: 99%

“…Setup2: Port 1 (3,4), Port 2 (2,5), Ref (1) We connect terminals 3 and 4 as port 1 and terminals 2 and 5 as port 2. At the same time, terminal 1 is used as a reference.…”

Section: Figure 5 Two-port S-parameter Measure 1 Setup Using a Vnamentioning

confidence: 99%

“…The small-signal equivalent circuit is shown in FIGURE.7. It can be obtained from the theoretical analysis of the circuit if terminals 3 and 4 are shorted, and series circuit 3 3 1 . As described in Setup 1, if we know the amplitude of the impedance curve for each branch, we can obtain several equations related to the parameter values of each component, the derivation of which will be described in detail in the next section.…”

Section: Figure 5 Two-port S-parameter Measure 1 Setup Using a Vnamentioning

confidence: 99%

“…Recently, several extraction methods have developed greatly, these methods can be roughly divided into four categories: numerical method, analytical method, indirect measurement method, and direct measurement method [3].…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

A Simplified Method for Extracting Parasitic Inductances of MOSFET-Based Half-Bridge Circuit

Zhong

Chen

et al. 2021

IEEE Access

View full text Add to dashboard Cite

To better predict the high-frequency switching operation of the half-bridge circuit in power converters, the value of the parasitic elements of these devices must be accurately evaluated. A new MOSFET-based half-bridge circuit parasitic inductances extraction method using two-port S-parameters is proposed in this paper. By changing the terminal connection of the half-bridge circuit, we can treat it as several different two-port networks, and then detailed network analysis can be performed on it. The parasitic parameters of multi-terminal actual circuits such as half-bridge can be extracted accurately and quickly through the simple measurement steps and calculations of the proposed method.

show abstract

Section: Cmeasure Setupmentioning

confidence: 99%

“…Setup2: Port 1 (3,4), Port 2 (2,5), Ref (1) We connect terminals 3 and 4 as port 1 and terminals 2 and 5 as port 2. At the same time, terminal 1 is used as a reference.…”

Section: Figure 5 Two-port S-parameter Measure 1 Setup Using a Vnamentioning

confidence: 99%

Section: Figure 5 Two-port S-parameter Measure 1 Setup Using a Vnamentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A Simplified Method for Extracting Parasitic Inductances of MOSFET-Based Half-Bridge Circuit

Zhong

Chen

et al. 2021

IEEE Access

View full text Add to dashboard Cite

show abstract

“…There are many researches on the extraction of this capacitance, the methods can be mainly characterized into four categories: analytical method [2], [11], [17]- [19]; numerical simulation [1]- [4], [20]; direct measurement method [4], [21] and indirect measurement method [7], [9], [22], [23].…”

mentioning

confidence: 99%

An on-Line Extraction Method for the Parasitic Capacitance of the Photovoltaic Panel

Wang¹,

Xun²,

Liu³

et al. 2019

CPSS TPEA

Self Cite

View full text Add to dashboard Cite

In the photovoltaic (PV) plant, the parasitic capacitance between the PV panel and the ground (C PV ) causes leakage current in the non-isolated systems. The case can be deteriorated in the rainy environment because the C PV increases dramatically due to the rainwater. The existing off-line methods are either through simulation or measurement by impedance analyzer, which are not easy to conduct on-site especially in the PV plant when it rains. The existing on-line capacitance measurement method is to measure the amplitude of the main components of voltage and current on the capacitance, but the measurement results are inaccurate because the parasitic resistance and inductance of the PV panels are not considered. This paper presents a simple on-line extraction method for the C PV , which is obtained through measurement of the oscillation period of the leakage current. In this way, the C PV can be obtained even the equipment is running. The principle is analyzed in a full-bridge case and the simulation and experiment are carried out for the verification. Finally, the C PV obtained in this method is compared with the 3D finite element simulation, the measurement by impedance analyzer and the existing on-line calculation method, which shows the accuracy of this proposed method.

show abstract

Characterization of Parasitic Impedances of PV Panels from Common Mode Perspective

Kane

Taylor

Månsson

2022

2022 International Symposium on Electromagnetic Compatibility – EMC Europe

View full text Add to dashboard Cite

An Extraction Method for the Parasitic Capacitance of the Photovoltaic Module Based on the Oscillation of the Leakage Current

Cited by 4 publications

References 19 publications

A Simplified Method for Extracting Parasitic Inductances of MOSFET-Based Half-Bridge Circuit

A Simplified Method for Extracting Parasitic Inductances of MOSFET-Based Half-Bridge Circuit

An on-Line Extraction Method for the Parasitic Capacitance of the Photovoltaic Panel

Characterization of Parasitic Impedances of PV Panels from Common Mode Perspective

Contact Info

Product

Resources

About