Interface charge transfer plays a key role in the performance of semiconductors for different kinds of solar energy utilization, such as photocatalysis, photoelectrocatalysis, photochromism and photo-induced superhydrophilicity. In previous studies, different mechanisms have been used to understand interface charge transfer process. However, the charge transfer mechanism at solid/liquid interface remains a controversial topic. Here, taking TiO2 as a model, we find and prove a new characteristic of photo-induced bipolarity of the surface layer (reduction faradaic layer and oxidation faradaic layer) on a semiconductor by experiments for the first time. Different from energy level positions in classic surface states transfer mechanism, the potential window of a surface faradaic layer locates out of the forbidden band. Moreover, we find that the reduction faradaic layer and oxidation faradaic layer serve as electron and hole transfer mediators in photocatalysis, while the bipolarity or mono-polarity of the surface layer on a semiconductor depends on the applied potential in photoelectrocatalysis. The new characteristic of bipolarity can also offer new insights on charge transfer process at semiconductor/liquid interface for solar energy utilization.