An IC process compatible nonvolatile magnetic RAM

Tang, D.D.; Wang, P.K.; Speriosu, V. S.; Le, S.; Fontana, R.E.; Rishton, S. A.

doi:10.1109/iedm.1995.499384

Cited by 13 publications

(4 citation statements)

References 1 publication

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“…Since the late 1980s several magnetoresistive memories have been developed exploiting AMR or GMR effects [26,27] but none of them have been competitive enough to overcome or even worry the mainstream CMOS memories. These first MRAM architectures had yet one advantage over their CMOS counterparts due to their radiation tolerance which makes them attractive for spatial and military applications [28].…”

Section: Mram Based On Field-induced Magnetization Switchingmentioning

confidence: 99%

Hybrid CMOS/Magnetic Memories (MRAMs) and Logic Circuits

Diény

Sousa

Prenat

et al. 2014

Emerging Non-Volatile Memories

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Spintronics (or spin electronics) is a continuously expending area of research and development at the merge between magnetism and electronics. It aims at taking advantage of the quantum characteristic of the electrons, i.e., its spin, to create new functionalities and new devices. Spintronic devices comprise magnetic layers which serve as spin polarizers or analyzers separated by nonmagnetic layers through which the spin-polarized electrons are transmitted. It is considered that spintronics started in 1988 with the discovery of the giant magnetoresistance (GMR) effect, which corresponds to a large variation of the resistance of a magnetic multilayer under the application of a magnetic field [1]. Shortly later, spin valve structures were invented [2]. The latter exhibit GMR at low fields and thereby constitute very sensitive magnetic field sensors. In 1998, they were introduced as sensing elements in readback heads in computer disk drives. More than one billion of such read heads are produced each year. Besides the usual applications of hard disk drives in desktops,

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Section: Mram Based On Field-induced Magnetization Switchingmentioning

confidence: 99%

Hybrid CMOS/Magnetic Memories (MRAMs) and Logic Circuits

Diény

Sousa

Prenat

et al. 2014

Emerging Non-Volatile Memories

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“…A group from IBM investigated a spin valve cell design in which the GMR structure was composed of two 9-nm thick NiFe magnetic films separated by a 2.2 to 2.5-nm thick Cu film [35]. The pinned layer was held using a 24-nm thick FeMn antiferromagnetic film.…”

Section: Spin Valve Mrammentioning

confidence: 99%

Tutorial on magnetic tunnel junction magnetoresistive random-access memory

Cockburn

2004

Records of the 2004 International Workshop on Memory Technology, Design and Testing, 2004.

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Magnetic tunnel junction magnetoresistive randomaccess memory (MTJ-MRAM) appears to be in an advanced stage of development at several companies, including Motorola Inc., IBM Corporation, Infineon Technologies and Cypress Semiconductor Corp. MRAM has the potential to become a universal memory technology, with the high speed of SRAM, the nonvolatility of flash memory (but with much greater write-erase endurance than flash memory), and with storage densities that could approach those of DRAM. MRAM is embeddable in conventional CMOS processes with as few as four additional masks. We briefly review early MRAM technologies such as anisotropic MRAM, spin valve MRAM, and pseudo spin valve MRAM. Then we survey both conventional MTJ-MRAM and the recentlydeveloped read-before-write toggle-mode MTJ-MRAM.

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“…[1][2][3][4][5] The key element of a MRAM cell is a patterned stripe of two magnetic NiFeCo layers separated by a nonmagnetic Cu interlayer. In particular, the read/write endurance of MRAM makes it an attractive alternative to FLASH technology.…”

Section: Introductionmentioning

confidence: 99%

Process development of sub-0.5 μm nonvolatile magnetoresistive random access memory arrays

Nordquist

Pendharkar

Durlam

et al. 1997

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inLow switching current flux-closed magnetoresistive random access memory J. Appl. Phys. 93, 7307 (2003); 10.1063/1.1557372Ultrahigh density vertical magnetoresistive random access memory (invited)High density submicron magnetoresistive random access memory (invited)The fabrication of magnetoresistive random access memory ͑MRAM͒ devices requires full characterization of the giant magnetoresistive ratio ͑GMR͒ permalloy films at the sub-0.5 m feature dimensions. Future memory arrays of the 1 and 4 Gb density require GMR bit cells of a 0.25 m and below in configurations which will require close proximity of cells. Since the cells are magnetic and act like tiny magnets, the switching field of a cell may be influenced by the polarization direction of the neighboring cell. This article describes the development of sub-0.5 m MRAM devices using current e-beam microfabrication techniques and the implementation of the latest chemically amplified deep ultraviolet resists. Etch processing is also discussed as well as the testing results for the 0.25 m arrays. Testing the GMR material at these dimensions consists of evaluating the single magnetic domain behavior and observing the effect of cell size on the magnetoresistance ratio. Array testing will consist of measuring switching field variations on a 0.25 m 5ϫ5 array to determine if there is field coupling with neighboring cells.

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An IC process compatible nonvolatile magnetic RAM

Cited by 13 publications

References 1 publication

Hybrid CMOS/Magnetic Memories (MRAMs) and Logic Circuits

Hybrid CMOS/Magnetic Memories (MRAMs) and Logic Circuits

Tutorial on magnetic tunnel junction magnetoresistive random-access memory

Process development of sub-0.5 μm nonvolatile magnetoresistive random access memory arrays

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