An impedance spectroscopic study of n-type phosphorus-doped diamond

Abstract

An important development in the field of diamond electronics has been the production of n-type electrical characteristics following homoepitaxial diamond growth on (111) diamond in the presence of phosphorus-containing gases. Several studies have reported that a phosphorus donor level forms with an activation energy in the range of 0.43–0.6eV; the ground state for the donor level is considered to be at 0.6eV. Little is currently known about other electrically active defects that may be produced alongside the donor state when phosphorus is introduced. In this paper we report upon the use of impedance spectroscopy, which can isolate the differing components that contribute to the overall conductivity of the film. In Cole-Cole plots, two semicircular responses are observed for all temperatures above 75°C; a single semicircle being seen at temperatures below this. The results suggest the presence of two conduction paths with activation energies of 0.53 and 0.197eV. The former can be attributed to the phosphorus donor level, being lower than 0.6eV due to reduced mobility within the film at elevated temperatures. The latter is discussed in terms of defects in the P+-doped region under the Ohmic contacts being used.

New 2-methylimidazole–dicarboxylic acid molecular crystals: crystal structure and proton conductivity

“…At lower temperatures the separation of both contributions is possible and an example of the fit to the impedance data measured at the temperature of 296 K is shown in figure 10. The situation is then similar to that found, for example, for n-type phosphorus-doped diamond [19] where two wellseparated semicircular responses above 75 • C were observed, suggesting the presence of two conduction paths with various activation energies. Similarly, in the case of nanostructured diamond films [20] the impedance spectroscopy enabled us to reveal two contributions to the electrical conductivity: from grain interior and from grain boundaries, each of them dominating in different temperature regions.…”

Properties, mechanism and applications of diamond as an antibacterial material

“…Thanks to its superior hardness, resistance [179] and tribological properties [180][181][182][183][184][185][186][187], fluorescence outside of the biological range [188,189], electric and electronic properties [190][191][192][193][194][195][196][197][198][199][200][201][202] (noticeably as a substrate for Metal Oxide Semiconductor Field-Effect Transistor [203]), easy surface functionalisation [198,204] and chemical inertness [205], the diamond appeared, despite its price, as a choice base material for the development of antibacterial coatings, films and particles. In this review, the antibacterial properties of diamond films, diamond nanoparticles, and the main composites developed from them are investigated as exhaustively as possible.…”

Phosphorus‐Doped Nanocrystalline Diamond for Supercapacitor Application

“…The incorporation of a high concentration of phosphorus atoms in the diamond lattice is relatively difficult. To some extent, the diamond lattice periodicity is disturbed, resulting in lattice defects and crystalline imperfection in the doped PDD films ,. Moreover, phosphorus is known to exhibit a high activation energy (about 0.6 eV), another reason associated with the relatively low conductivity of as‐grown PDD films …”