An Improved Compact Model for a Silicon-Carbide MOSFET and Its Application to Accurate Circuit Simulation

Mukunoki, Yasushige; Konno, Kentaro; Matsuo, Tsubasa; Horiguchi, T.; Nishizawa, Akinori; Kuzumoto, Masaki; Hagiwara, Makoto; Akagi, Hirofumi

doi:10.1109/tpel.2018.2796583

Cited by 42 publications

(17 citation statements)

References 11 publications

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“…The measurements of the off-state C-V characteristics, (C iss , C oss , C rss ), are commonly performed using semiconductor curve tracers [14], [15]. It has been shown in literature that C gs , C gd , and C ds are dependent on both terminal voltages: V gs and V ds [6], [8], [9], [16]- [18]. The standard curve tracers such as a Keithley Parametric Curve Tracer 2600-PCT-4B [15] and a Keysight B1505A with integrated ultra-highcurrent unit [14], enable pulse-based measurements at high voltage bias and current conduction [2].…”

Section: Mosfet Capacitances Characterization: State-of-the-artmentioning

confidence: 99%

“…It was shown that non-linear voltage-dependence of interterminal MOSFET capacitances determine the dynamic performance of power MOSFETs. Their implementation in compact models is of a high importance for an accurate prediction of the switching waveforms [3]- [6]. Compact device models have been used by engineers for simulations of power electronic circuits, demanding a compromise between computational complexity and modelling accuracy.…”

Section: Introductionmentioning

confidence: 99%

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Accuracy of Three Interterminal Capacitance Models for SiC Power MOSFETs Under Fast Switching

Stark

Tsibizov

Nain

et al. 2021

IEEE Trans. Power Electron.

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This paper presents a comprehensive analysis of non-linear voltage-dependent capacitances of vertical SiC power MOSFETs with lateral channel, focusing specifically on fast switching transients. The capacitance-voltage (C-V) device characteristics, (Cgs, C gd , C ds), being dependent on both Vgs and V ds , are extracted by means of two-dimensional Technology Computer Aided Design (TCAD) simulations for a commercially available device in both off-and on-state modes. Different compact models for the power MOSFET are investigated, each employing a three inter-terminal capacitance model as typically used in power electronics. The performed analysis provides a detailed explanation for the importance of taking into account the dependence of C gd , Cgs and C ds on both of the voltages Vgs and V ds. This is especially important for fast switching transients (in the range of 10 ns) in order to accurately predict switching losses, driver losses, current and voltage slopes, as well as current and voltage delays. As direct measurements for C gd , Cgs and C ds in dependence of both Vgs and V ds are highly demanding, the results presented in this paper increase the understanding of both the underlying effects as well as of the trade-offs between accuracy and computational complexity made by simplifying device models. In turn, this information is highly beneficial for enabling accurate and computationally efficient automated design procedures for power electronics.

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Section: Mosfet Capacitances Characterization: State-of-the-artmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Accuracy of Three Interterminal Capacitance Models for SiC Power MOSFETs Under Fast Switching

Stark

Tsibizov

Nain

et al. 2021

IEEE Trans. Power Electron.

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show abstract

“…Hefner's physical IGBT model is also available in Saber simulator. Other physicsbased models have been proposed in the literature for IGBT [49]- [53] and power MOSFET [54]- [56] as the most common switching devices of power converters. SPICE-based simulation tools, PSIM and ANSYS Simplorer are among standard circuit simulation tools.…”

Section: B Switching Devicesmentioning

confidence: 99%

Modeling of Conducted Emissions for EMI Analysis of Power Converters: State-of-the-Art Review

2020

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Electromagnetic interference issues are associated with high-speed switching of power converters. EMI modeling is an essential tool to study and control the EMI emission, enabling more efficient solutions. A comprehensive review and comparison of different modeling approaches for conducted emissions are provided in this paper, which can be used as a design guideline for engineers. For a motor drive application, common mode and differential mode conducted emissions are studied, and dominant noise production mechanisms are identified. Moreover, a review of various modeling techniques is presented for the main parasitic components of the system. Finally, time domain and frequency domain analysis approaches are explored along with the equivalent circuits which enable fast prediction of EMI emissions. This paper intends to help the reader develop an organized understanding of conducted emission modeling to assist them with a more efficient and electromagnetically-compatible design. INDEX TERMS Circuit modeling, common mode, conducted emission, differential mode, electromagnetic interference (EMI), motor drive inverters.

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“…Significant developments have also occurred within the category of behavioral models in the last several years. For example, Mukunoki et al replace the physics-based conduction model of [17], [18] with a behavioral description in order to improve the run-time performance and remove proprietary geometric data from the modeling process in [21]. Additionally, this paper extends the static characterization of the model to include VDS from 200 to 800 V via load-short-circuit waveforms.…”

Section: Recent Behavioral Modelsmentioning

confidence: 99%

Computational Efficiency Analysis of SiC MOSFET Models in SPICE: Static Behavior

Nelson

Lemmon

Jimenez

et al. 2020

IEEE Open J. Power Electron.

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Transient simulation of complex converter topologies is a challenging problem, especially in detailed analysis tools like SPICE. Much of the recent literature on SPICE transistor modeling ignores the requirements of application designers and instead emphasizes detail, physical accuracy, and complexity. While these advancements greatly improve model accuracy, they also serve to increase computational complexity, making the resulting models less attractive to application designers. While some authors depart from this trend and present models which emphasize simulation speed, their results and analysis are limited to qualitative observation. This research develops a methodology to quantify the computational cost of model features and competitively benchmark models against each other. Additionally, it reviews recently published SiC MOSFET models and presents a trade study on several candidate models likely to fare well in complex application simulations. Finally, this study also identifies key considerations which should be carried forward into future model design.

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An Improved Compact Model for a Silicon-Carbide MOSFET and Its Application to Accurate Circuit Simulation

Cited by 42 publications

References 11 publications

Accuracy of Three Interterminal Capacitance Models for SiC Power MOSFETs Under Fast Switching

Accuracy of Three Interterminal Capacitance Models for SiC Power MOSFETs Under Fast Switching

Modeling of Conducted Emissions for EMI Analysis of Power Converters: State-of-the-Art Review

Computational Efficiency Analysis of SiC MOSFET Models in SPICE: Static Behavior

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