An improved de-embedding technique for on-wafer high-frequency characterization

Thermal Noise in Modern CMOS Technology

“…In 1987, van Wijnen et al presented a method to remove the capacitive parasitics of probe pads from the on-wafer s-parameter measurements by measuring an additional "OPEN" dummy structure (van Wijnen, Claessen & Wolsheimer, 1987). In 1991, Koolen et al improved the de-embedding procedure with the consideration of the influence of the interconnections by measuring another "SHORT" dummy structure (Koolen, Geelen & Versleijen, 1991). Lee et al, in 1994, modified the "SHORT' structure and the de-embedding method presented by Koolen et al so as to extract the parasitic inductances of the interconnections (Lee, Ryum & Kang, 1994).…”

A comparison between grounded and floating shield inductors for mmW VCOs

“…Several calibration and de-embedding procedures were checked. The results shown in this work were obtained from a LRRM calibration at the probe tips followed by an OPEN-SHORT de-embedding [7] using the Short 2 and Open 2 structures shown in Fig. 2.…”

A Thru-Only De-Embedding Method Foron-Wafer Characterization of Multiport Networks

“…The frequency ranged from 100 MHz to 50 GHz. The two-step open-short method (Koolen et al, 1991) originally proposed for a two-port was also applied for comparison. (Fig.…”