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The high-frequency power performance of mounted discrete silicon bipolar transistors, that have been optimisvd for low-voltage application, has been evaluated. At I .8GHz and 3.5V a power gain of 14dB and a poweradded efficiency of 60% at an RF power density of 1Wlmm emitter length have been measured. These result $ demonstrate that also at low supply voltages silicon B Jl's have excellent power amplifying capabilities.

Abshcf-In this paper we present a new pmise LDMOS(T) model. The model includes constant as well as bias dependent time delay effects. Furthermore, we demonstrate some new model extraction methods, which allow precise delay time calculations. The model has been implemented into Agilents' ADS' software. We show compression and intermodulation simulations in excellent comparison with measuremen&