The high-frequency power performance of mounted discrete silicon bipolar transistors, that have been optimisvd for low-voltage application, has been evaluated. At I .8GHz and 3.5V a power gain of 14dB and a poweradded efficiency of 60% at an RF power density of 1Wlmm emitter length have been measured. These result $ demonstrate that also at low supply voltages silicon B Jl's have excellent power amplifying capabilities.
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