An Improved Electro-Thermal Model to Estimate the Junction Temperature of IGBT Module

Hu, Zhi Yi; Zhang, Wenfeng; Wu, Jianshen

doi:10.3390/electronics8101066

Cited by 14 publications

(8 citation statements)

References 36 publications

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“…Where 2 is the outer radius and 1 is the inner radius of a cylindrical wall in meters, is the specific thermal conductivity in watt/°C·meter, and is the length along the axial direction of the tube. Thermal capacitance in watt·second/°C can be calculated using the relation [8,24]:…”

Section: Extraction Of Thermal Parametersmentioning

confidence: 99%

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LTspice Electro-Thermal Model of Joule Heating in High Density Polyethylene Optical Fiber Microducts

Akram¹,

Bertilsson²,

Sidén³

2019

Electronics

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At present, optical fiber microducts are joined together by mechanical type joints. Mechanical joints are bulky, require more space in multiple duct installations, and have poor water sealing capability. Optical fiber microducts are made of high-density polyethylene which is considered best for welding by remelting. Mechanical joints can be replaced with welded joints if the outer surface layer of the optical fiber microduct is remelted within one second and without thermal damage to the inner surface of the optical fiber duct. To fulfill these requirements, an electro-thermal model of Joule heat generation using a copper coil and heat propagation inside different layers of optical fiber microducts was developed and validated. The electro-thermal model is based on electro-thermal analogy that uses the electrical equivalent to thermal parameters. Depending upon the geometric shape and material properties of the high-density polyethylene, low-density polyethylene, and copper coil, the thermal resistance and thermal capacitance values were calculated and connected to the Cauer RC-ladder configuration. The power input to Joule heating coil and thermal convection resistance to surrounding air were also calculated and modelled. The calculated thermal model was then simulated in LTspice, and real measurements with 50 µm K-type thermocouples were conducted to check the validity of the model. Due to the non-linear transient thermal behavior of polyethylene and variations in the convection resistance values, the calculated thermal model was then optimized for best curve fitting. Optimizations were conducted for convection resistance and the power input model only. The calculated thermal parameters of the polyethylene layers were kept intact to preserve the thermal model to physical structure relationship. Simulation of the optimized electro-thermal model and actual measurements showed to be in good agreement. Author Contributions: Conceptualization, K.B., S.A., and J.S.; methodology, S.A. and K.B.; software, S.A. and K.B.; validation, S.A. and K.B.; formal analysis, S.A. and K.B.; investigation, S.A. and K.B.; resources, K.B. and J.S.; data curation, K.B., S.A. and J.S.; writing-original draft preparation, S.A.; writing-review and editing, J.S.; visualization, S.A.; supervision, K.B. and J.S.; project administration, J.S.; funding acquisition, K.B. and J.S.Funding: This research work is part of the project FIBER, funded through the European Regional Development Fund. Conflicts of Interest:The authors declare no conflict of interest.

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Section: Extraction Of Thermal Parametersmentioning

confidence: 99%

“…It can be seen in Figure 3 that each layer can be divided into three hollow cylinders or tubes. The outer tube and inner tube represent the inner and outer sections of the layers along the axial Thermal capacitance in watt·second/ • C can be calculated using the relation [8,24]:…”

Section: Computed Rc Thermal Modelmentioning

confidence: 99%

LTspice Electro-Thermal Model of Joule Heating in High Density Polyethylene Optical Fiber Microducts

Akram¹,

Bertilsson²,

Sidén³

2019

Electronics

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“…Many electronic and power electronic circuits include Insulated Gate Bipolar Transistors (IGBTs) [1][2][3][4]. Properties of these devices strongly depend on their internal temperature T j [5][6][7]. This temperature exceeds ambient temperature T a due to thermal phenomena [5,8,9].…”

Section: Introductionmentioning

confidence: 99%

Measurements and Computations of Internal Temperatures of the IGBT and the Diode Situated in the Common Case

Górecki

2021

Electronics

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This article proposes effective methods of measurements and computations of internal temperature of the dies of the Insulted Gate Bipolar Transistor (IGBT) and the diode mounted in the common case. The nonlinear compact thermal model of the considered device is proposed. This model takes into account both self-heating phenomena in both dies and mutual thermal couplings between them. In the proposed model, the influence of the device internal temperature on self and transfer thermal resistances is taken into account. Methods of measurements of each self and transfer transient thermal impedances occurring in this model are described and factors influencing the measurement error of these methods are analysed. Some results illustrating thermal properties of the investigated devices including the IGBT and the antiparallel diode in the common case are shown and discussed. Computations illustrating the usefulness of the proposed compact thermal model are presented and compared to the results of measurements. It is proved that differences between internal temperature of both dies included in the TO-247 case can exceed even 15 K.

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“…is method can directly and accurately obtain the junction surface temperature map, but the implementation usually requires expensive instruments and extra modification on the standard module package. e typical physical method is the electrothermal model, which uses thermistors or thermocouples to physically contact the IGBT chip and infer the junction temperature [11,12]. However, this method's response time is usually long because of the thermal capacitance of thermistors and thermocouples [5].…”

Section: Introductionmentioning

confidence: 99%

An Improved Prediction Model of IGBT Junction Temperature Based on Backpropagation Neural Network and Kalman Filter

Dou

2021

Complexity

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With the rapid development of emerging technologies such as electric vehicles and high-speed railways, the insulated gate bipolar transistor (IGBT) is becoming increasingly important as the core of the power electronic devices. Therefore, it is imperative to maintain the stability and reliability of IGBT under different circumstances. By predicting the junction temperature of IGBT, the operating condition and aging degree can be roughly evaluated. However, the current predicting approaches such as optical, physical, and electrical methods have various shortcomings. Hence, the backpropagation (BP) neural network can be applied to avoid the difficulties encountered by conventional approaches. In this article, an advanced prediction model is proposed to obtain accurate IGBT junction temperature. This method can be divided into three phases, BP neural network estimation, interpolation, and Kalman filter prediction. First, the validities of the BP neural network and Kalman filter are verified, respectively. Then, the performances of them are compared, and the superiority of the Kalman filter is proved. In the future, the application of neural networks or deep learning in power electronics will create more possibilities.

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An Improved Electro-Thermal Model to Estimate the Junction Temperature of IGBT Module

Cited by 14 publications

References 36 publications

LTspice Electro-Thermal Model of Joule Heating in High Density Polyethylene Optical Fiber Microducts

LTspice Electro-Thermal Model of Joule Heating in High Density Polyethylene Optical Fiber Microducts

Measurements and Computations of Internal Temperatures of the IGBT and the Diode Situated in the Common Case

An Improved Prediction Model of IGBT Junction Temperature Based on Backpropagation Neural Network and Kalman Filter

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