An Improved I-V model for Resistive Random Access Memory

Chung, Harry; Shin, Hyungsoon; Sun, Wookyung; Park, Jisun

doi:10.1109/icecet55527.2022.9873017

Cited by 1 publication

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“…The device performance in the switching region improved when the physical properties of the device were reflected in the model [21]. The x/D range was restricted between 0 and 1 in the existing model.…”

Section: Resultsmentioning

confidence: 99%

A Unified Current-Voltage Model for Metal Oxide-Based Resistive Random-Access Memory

et al. 2022

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Resistive random-access memory (RRAM) is essential for developing neuromorphic devices, and it is still a competitive candidate for future memory devices. In this paper, a unified model is proposed to describe the entire electrical characteristics of RRAM devices, which exhibit two different resistive switching phenomena. To enhance the performance of the model by reflecting the physical properties such as the length index of the undoped area during the switching operation, the Voltage ThrEshold Adaptive Memristor (VTEAM) model and the tungsten-based model are combined to represent two different resistive switching phenomena. The accuracy of the I–V relationship curve tails of the device is improved significantly by adjusting the ranges of unified internal state variables. Furthermore, the unified model describes a variety of electrical characteristics and yields continuous results by using the device’s current-voltage relationship without dividing its fitting conditions. The unified model describes the optimized electrical characteristics that reflect the electrical behavior of the device.

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Section: Resultsmentioning

confidence: 99%