An improved intrinsic small‐signal equivalent circuit model of delta‐doped AlGaAs/InGaAs/GaAs HEMT for microwave frequency applications

Guru, Vandana; Jogi, Jyotika; Gupta, Mridula; Vyas, H. P.; Gupta, R. S.

doi:10.1002/mop.10923

Cited by 6 publications

(2 citation statements)

References 14 publications

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“…Therefore, the presented analysis can be beneficial to the power amplifier designs in the breakdown region. [1,2] In addition, different from the black-box behavioral model, the obtained equivalent circuit model is useful for the optimization of the device design [18][19][20] and helps us understand device physics [21][22][23] under large-signal operation. Besides, the presented inductive breakdown network can be applicable to other transistors in the presence of RF inductive breakdown.…”

Section: Journal Of Electromagnetic Waves and Applications 1871mentioning

confidence: 99%

Large-signal output characteristic investigation of the MOSFETs in the breakdown region based on X-parameters

Lee

Lin

2015

Journal of Electromagnetic Waves and Applications

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In this paper, large-signal output characteristics of the metal-oxide-semiconductor field-effect transistors in the breakdown region are investigated using X-parameter measurements for the first time. Magnitude of X T 2121 coefficients can be larger than the result of X s 2121 coefficients at high input power as drain voltage increases to the breakdown region. The output impedance X z 2121 under large-signal drive incorporating with the X s 2121 and X T 2121 coefficients is derived and then employed to investigate output matching in the breakdown region and at high input power, which is significant for power amplifier designs. Compared with the conventional hot-Z 2121 without X T 2121 coefficients considered, X z 2121 can be more accurate for the output impedance characterization. The presented analysis based on the X-parameters can be beneficial to output matching at high input power for power amplifier designs in the breakdown region.

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Section: Journal Of Electromagnetic Waves and Applications 1871mentioning

confidence: 99%

Large-signal output characteristic investigation of the MOSFETs in the breakdown region based on X-parameters

Lee

Lin

2015

Journal of Electromagnetic Waves and Applications

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“…Next, de‐embedded S ‐parameters of the HEMT device is delivered to a small‐signal modeling process to investigate the influence of residual error on model parameters extraction. The modeling process is quite similar with well‐developed method for HEMT devices in literature, but it starts simply from intrinsic topology of the small‐signal model illustrated in Figure . Y ‐parameters of the intrinsic equivalent circuit can be simply expressed as

y_{11} = Y_{GS} + Y_{GD}

y_{12} = - Y_{GD}

y_{21} = \frac{g_{m} \exp ((), - italicjωτ)}{1 + italicjω C_{gs} R_{i}} - Y_{GD}

y_{22} = Y_{DS} + Y_{GD}

where Y GS , Y GD , and Y DS are passive admittances of corresponding branch,

Y_{GS} = \frac{1}{R_{italicgs}} + \frac{ω^{2} C_{gs}^{2} R_{i} + italicjω C_{gs}}{1 + ω^{2} C_{gs}^{2} R_{i}^{2}}

Y_{GD} = \frac{1}{R_{italicgd}} + \frac{ω^{2} C_{gd}^{2} R_{j} + italicjω C_{gd}}{1 + ω^{2} C_{gd}^{2} R_{j}^{2}}

Y_{}

…”

Section: De‐embedding Errors and Its Influence On Model Extractionmentioning

confidence: 99%

A de‐embedding method with matrix rectification and influences of residual errors on model parameters extraction of InP HEMTs

Ding

et al. 2020

Int J RF Microw Comput Aided Eng

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As the cutoff frequency of InP HEMTs enters the terahertz band, high frequency measurement and modeling techniques in hundreds of gigahertz become urgent needs for further millimeter monolithic integrated circuits design. We proposed a new de‐embedding method linking device measurements and modeling based on full EM simulation data acquired from HFSS and advanced design system (ADS). The simulation results for passive dummy structures are well consistent with experiments, and the de‐embedding method is proved very effective for a resistive passive device with high distributed embedding surroundings in frequency range below 40 GHz. Based on these experimental facts, the EM simulations were extended up to 300 GHz and corresponding de‐embedding deviation was further investigated. Results show that the proposed de‐embedding method has very high accuracy in the whole frequency region with a maximum S‐parameters deviation of only 2.58%. However, further analysis proves that the small residual errors still significantly affect extracted small signal model parameters of InP HEMTs especially for transit time τ. Thus, further improvements on de‐embedding accuracy or careful considerations of more error functions in modeling process are necessary for obtaining physically meaningful model parameters.

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On the small signal modeling of advanced microwave FETs: A comparative study

Crupi

Schreurs

Caddemi

2008

Int J RF and Microwave Comp Aid Eng

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Although many successful techniques have been proposed in the last decades for extracting the small signal equivalent circuit for microwave transistors from scattering parameter measurements, small signal modeling is still object of intense research. Further improvement and development of the proposed methods are incessantly required to take into account the continuous and rapid evolution of the transistor technology. The purpose of this article is to facilitate the choice of the most appropriate strategy for each particular case. For that, we present a brief but thorough comparative study of analytical techniques developed for modeling different types of advanced microwave transistors: GaAs HEMTs, GaN HEMTs, and FinFETs. It will be shown that a crucial step for a successful modeling is to adapt accurately the small signal equivalent circuit topology under ''cold'' condition to each investigated technology.

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An improved intrinsic small‐signal equivalent circuit model of delta‐doped AlGaAs/InGaAs/GaAs HEMT for microwave frequency applications

Cited by 6 publications

References 14 publications

Large-signal output characteristic investigation of the MOSFETs in the breakdown region based on X-parameters

Large-signal output characteristic investigation of the MOSFETs in the breakdown region based on X-parameters

A de‐embedding method with matrix rectification and influences of residual errors on model parameters extraction of InP HEMTs

On the small signal modeling of advanced microwave FETs: A comparative study

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