An improved understanding for the transient operation of the power insulated gate bipolar transistor (IGBT)

Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. This article has been accepted for publication in a future issue of this journal, but has not been fully edited. Content may change prior to final publication. Abstract-In many power converter applications, particularly those with high variable loads such as traction and wind power, condition monitoring of the power semiconductor devices in the converter is considered desirable. Monitoring the device junction temperature in such converters is an essential part of this process. In this paper, a method for measuring the IGBT junction temperature using the collector voltage dV /dt at turn-off is outlined. A theoretical closed-form expression for the dV /dt at turn-off is derived, closely agreeing with experimental measurements. The role of dV /dt in dynamic avalanche in highvoltage IGBTs is also discussed. Finally, the implications of the temperature dependence of the dV /dt are discussed, including implementation of such a temperature measurement technique.

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“…This also agrees with the expressions in [22], [39] for the dV /dt, which is expressed using variables defined here as:…”

Section: Discussionsupporting

confidence: 84%

“…Substituting I C = I n0 + I p0 and equations (39,40,42,43) into (38) gives an expression for the steady-state charge Q H :…”

Section: B Emitter Recombination Through a Buffer Layermentioning

confidence: 99%

Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence

Bryant

Yang

Mawby

et al. 2011

IEEE Trans. Power Electron.

195

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“…With this in mind many efforts have been made to model and characterize (EMI) noise emissions of a particular device or system in power electronics [1,. However, there is still no definitive way for a unified approach of The modeling of EMI can generally be broken down into two categories: detailed, physics based modeling [21][22][23][24][25][26][27][28][29][30] and behavioral modeling [31][32][33][34][35][36][37][38][39][40][41][42][43][44][45][46][47][48][49]. Either method can be used to model the EMI propagation path or the noise source.…”

Section: Literature Reviewmentioning

confidence: 99%

“…A complete model of an active device includes non-linear and higher order switching and static characteristics. One of the more complex devices to model is the insulated gate bipolar transistor (IGBT); an accurate physics based model is presented in [21]. This model allows for examination of the switching behavior under certain loading conditions.…”

Section: Detailed Physics Based Modeling Approachmentioning

confidence: 99%

Generalized Terminal Modeling of Electromagnetic Interference

Baisden

Boroyevich

Wang

2010

IEEE Trans. on Ind. Applicat.

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Terminal models have been used for various power electronic applications. In this work a two-and three-terminal black box model is proposed for electro-magnetic interference (EMI) characterization. The modeling procedure starts with a time-variant system at a particular operating condition, which can be a converter, set of converters, sub-system or collection of components. A unique, linear equivalent circuit is created for applications in the frequency domain. Impedances and current / voltage sources define the noise throughout the entire EMI frequency spectrum. All parameters needed to create the model are clearly defined to ensure convergence and maximize accuracy.The model is then used to predict the attenuation caused by a filter with increased accuracy over small signal insertion gain measurements performed with network analyzers. Knowledge of EMI filters interactions with the converter allows for advanced techniques and design constraints to optimize the filter for size, weight, and cost. Additionally, the model is also demonstrated when the operating point of the system does not remain constant, as with AC power systems.Modeling of a varying operating point requires information of all the operating conditions for a complete and accurate model. However, the data collection and processing quickly become unmanageable due to the large amounts of data needed. Therefore, simplification techniques are used to reduce the complexity of the model while maintaining accuracy throughout the frequency spectrum.The modeling approach is verified for linear and power electronic networks including: a dcdc boost converter, phase-leg module, and a simulated dc-ac inverter. The accuracy of the model is confirmed up to 100 MHz in simulation and at least 50 MHz for experimental validation.

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“…Several research groups throughout the world have tried to advance the state of the art with respect to the status summarized in previous review articles [1], [2]. A number of new concepts for trimming the basic physical equations to the requirements of a power semiconductor device model for circuit simulation have been proposed [42], [43], [53], [69], [75], [101], [117], [119], [122], [129], [134], [140]. The special challenge in developing such models for circuit simulation results from the need to simultaneously fulfill contradicting requirements like high quantitative accuracy, low demand of computation power, and physical and easy accessible model parameters.…”

mentioning

confidence: 99%

Status and trends of power semiconductor device models for circuit simulation

Kraus

Mattausch

1998

IEEE Trans. Power Electron.

112

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Abstract-The current status of research in the field of power semiconductor device models is reviewed. For this purpose, the basic modeling problems and research issues, which have to be overcome in this field, are discussed. Recently, some new and quite promising modeling concepts have been proposed, which are compared with more traditional ways of achieving an efficient tradeoff between the necessary accuracy, required simulation speed, and feasibility of parameter determination. From this comparison, a prediction of the future evolution of circuit simulation models for power semiconductor devices naturally emerges. Many of the different concepts are expected to survive only in an application niche, where their specific points of strength are important. However, three modeling concepts have already been proven to be successfully applicable to the complete spectrum of power semiconductor devices and have their strength for different grades of complexity of the power circuit. A revolutionary development from anticipated or longdue breakthroughs is on the other hand not expected in the foreseeable future.

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An improved understanding for the transient operation of the power insulated gate bipolar transistor (IGBT)

Cited by 28 publications

References 15 publications

Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence

Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence

Generalized Terminal Modeling of Electromagnetic Interference

Status and trends of power semiconductor device models for circuit simulation

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