An Improved UU-MESFET with High Power Added Efficiency

Jia, Haiqiang; Hu, Mei; Zhu, Shunwei

doi:10.3390/mi9110573

Cited by 9 publications

(6 citation statements)

References 8 publications

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“…With the continuous reduction in device size, the requirements of device design for power consumption and efficiency become increasingly higher. In recent years, how to improve the PAE of devices without significantly sacrificing DC and AC characteristics has gradually become an important topic [ 15 , 16 , 17 ].…”

Section: Introductionmentioning

confidence: 99%

A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region

et al. 2021

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A novel 4H-SiC MESFET was presented, and its direct current (DC), alternating current (AC) characteristics and power added efficiency (PAE) were studied. The novel structure improves the saturation current (Idsat) and transconductance (gm) by adding a heavily doped region, reduces the gate-source capacitance (Cgs) by adding a lightly doped region and improves the breakdown voltage (Vb) by embedding an insulated region (Si3N4). Compared to the double-recessed (DR) structure, the saturation current, the transconductance, the breakdown voltage, the maximum oscillation frequency (fmax), the maximum power added efficiency and the maximum theoretical output power density (Pmax) of the novel structure is increased by 24%, 21%, 9%, 11%, 14% and 34%, respectively. Therefore, the novel structure has excellent performance and has a broader application prospect than the double recessed structure.

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Section: Introductionmentioning

confidence: 99%

A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region

et al. 2021

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“…There are a variety of ways to improve device performance, such as the use of double-recessed gates [4], recessed buffers and diffusion regions [5,6], doping distribution modification [7,8], silicon-on-insulator (SOI) technology [9,10] and so on, which can significantly improve device performance. At the same time, there is little research on efficiency [11,12]. For non-conventional 4H-SiC-based FETs, the characteristics of the device can be studied using numerical simulations [13,14,15,16,17].…”

Section: Introductionmentioning

confidence: 99%

Improved MRD 4H-SiC MESFET with High Power Added Efficiency

et al. 2019

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An improved multi-recessed double-recessed p-buffer layer 4H–SiC metal semiconductor field effect transistor (IMRD 4H-SiC MESFET) with high power added efficiency is proposed and studied by co-simulation of advanced design system (ADS) and technology computer aided design (TCAD) Sentaurus software in this paper. Based on multi-recessed double-recessed p-buffer layer 4H–SiC metal semiconductor field effect transistor (MRD 4H-SiC MESFET), the recessed area of MRD MESFET on both sides of the gate is optimized, the direct current (DC), radio frequency (RF) parameters and efficiency of the device is balanced, and the IMRD MESFET with a best power-added efficiency (PAE) is finally obtained. The results show that the PAE of the IMRD MESFET is 68.33%, which is 28.66% higher than the MRD MESFET, and DC and RF performance have not dropped significantly. Compared with the MRD MESFET, the IMRD MESFET has a broader prospect in the field of microwave radio frequency.

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“…However, in order to achieve green development, enabling devices to have higher energy conversion efficiency has become a new central issue of research. In the papers An Improved DRBL AlGaN/GaN HEMT with High Power Added Efficiency [10] and An Improved UU-MESFET with High Power Added Efficiency [11], a higher power added efficiency (PAE) was obtained by balancing the parameters of the devices. The PAE of the improved with an ultrahigh upper gate MESFET (IUU-MESFET) and the double recessed barrier layer (DRBL) AlGaN/GaN HEMT increased 18% and 48%, respectively.…”

Section: Introductionmentioning

confidence: 99%

An Improved 4H-SiC MESFET with a Partially Low Doped Channel

Jia¹,

Tong²,

Li³

et al. 2019

Micromachines

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An improved 4H-SiC metal semiconductor field effect transistor (MESFET) based on the double-recessed MESFET (DR-MESFET) for high power added efficiency (PAE) is designed and simulated in this paper and its mechanism is explored by co-simulation of ADS and ISE-TCAD software. This structure has a partially low doped channel (PLDC) under the gate, which increases the PAE of the device by decreasing the absolute value of the threshold voltage (Vt), gate-source capacitance (Cgs) and saturation current (Id). The simulated results show that with the increase of H, the PAE of the device increases and then decreases when the value of NPLDC is low enough. The doping concentration and thickness of the PLDC are respectively optimized to be NPLDC = 1 × 1015 cm−3 and H = 0.15 μm to obtain the best PAE. The maximum PAE obtained from the PLDC-MESFET is 43.67%, while the PAE of the DR-MESFET is 23.43%; the optimized PAE is increased by 86.38%.

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An Improved UU-MESFET with High Power Added Efficiency

Cited by 9 publications

References 8 publications

A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region

A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region

Improved MRD 4H-SiC MESFET with High Power Added Efficiency

An Improved 4H-SiC MESFET with a Partially Low Doped Channel

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