Improved MRD 4H-SiC MESFET with High Power Added Efficiency

Zhu, Shunwei; Jia, Haiqiang; Wang, Xingyu; Li, Yuan; Tong, Yibo; Li, Tao; Yang, Yintang

doi:10.3390/mi10070479

Cited by 15 publications

(5 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The 6H-SiC with the wide band gap is a promising material for the application of blue light-emitting diode [3]. The 4H-SiC with high electron mobility is often used as power devices [4,5]. SiC exhibits the abundant structures due to the multiple bonding states (sp, sp 2 , sp 3 ) between carbon and silicon atoms, such as the zero-dimensional nanocages [6], onedimensional (1D) nanotubes, nanorods and nanowires [7][8][9][10][11], two-dimensional (2D) monolayer structures (Tetra-SiC and Penta-SiC 5 monolayer [12,13]) and three-dimensional (3D) crystal structures.…”

Section: Introductionmentioning

confidence: 99%

Novel polymeric phases proposed by cold-pressing SiC tubes

Wang

Liu

et al. 2022

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

A detailed structural evolution behavior of SiC SWNTs under high-pressure is studied by using density functional theory (DFT). We proposed four new polymeric phases (hP4-SiC, hP48-SiC, oI32-SiC and oA40-SiC), which possess the high stability, outstanding electronic and mechanical properties. The hP4-SiC, hP48-SiC and oA40-SiC are indirect band gap semiconductors, while the oI32-SiC is direct band gap semiconductor. The exhibited suitable band gap (~ 3.1 eV) allows hP4-SiC, hP48-SiC, oI32-SiC and oA40-SiC as the potential blue-laser diodes materials. The Si-C bond in four new structures is the strong covalent bond in sp3 hybridization, which results in their high stability and high hardness. The exhibited high decomposition temperature and high hardness make them as the potential high temperature abrasive materials. The stacking way of different rings in structures and atomic arrangement configurations of C and Si atoms in rings induce the anisotropic stiffness of polymeric structures. The analysis of XRD, Raman and IR spectra is performed for a guideline of their synthesis in experiment. These results would help to understand the structural evolution of SiC SWNTs under high pressure while contribute to develop the high hardness and high temperature devices.

show abstract

Section: Introductionmentioning

confidence: 99%

Novel polymeric phases proposed by cold-pressing SiC tubes

Wang

Liu

et al. 2022

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

show abstract

“…Wide bandgap (WBG) semiconductor devices such as GaN high electron mobility transistors (HEMTs) [1], [2], SiC metalsemiconductor field-effect transistors (MESFETs) [3], [4] and recently burgeoning AlN and β-Ga 2 O 3 based ultra-WBG (UWBG) devices [5]- [7] are extremely attractive for highpower and high-frequency electronic applications, due to the high breakdown voltage led by the wide bandgap. However, owing to their superhigh power density, they usually hold very high junction temperatures and the significant overheating within the devices largely restricts their actual performance [8]- [10] and shortens the device lifetime [11].…”

Section: Introductionmentioning

confidence: 99%

Spectral Thermal Spreading Resistance of Wide Bandgap Semiconductors in Ballistic-Diffusive Regime

Shen,

Hua,

et al. 2022

Preprint

View full text Add to dashboard Cite

To develop efficient thermal management strategies for wide bandgap (WBG) semiconductor devices, it is essential to have a clear understanding of the heat transport process within the device and accurately predict the junction temperature. In this paper, we used the phonon Monte Carlo (MC) method with the phonon dispersion of various typical WBG semiconductors, including GaN, SiC, AlN, and β-Ga2O3, to investigate the thermal spreading resistance in a ballistic-diffusive regime. It was found that when compared with Fourier's law-based predictions, the increase in the thermal resistance caused by ballistic effects was strongly related to different phonon dispersions. Based on the model deduced under the gray-medium approximation and the results of dispersion MC, we obtained a thermal resistance model that can well address the issues of thermal spreading and ballistic effects, and the influences of phonon dispersion. The model can be easily coupled with FEM based thermal analysis and applied to different materials. This paper can provide a clearer understanding of the influences of phonon dispersion on the thermal transport process, and it can be useful for the prediction of junction temperatures and the development of thermal management strategies for WBG semiconductor devices.

show abstract

“…With the continuous reduction in device size, the requirements of device design for power consumption and efficiency become increasingly higher. In recent years, how to improve the PAE of devices without significantly sacrificing DC and AC characteristics has gradually become an important topic [ 15 , 16 , 17 ].…”

Section: Introductionmentioning

confidence: 99%

A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region

et al. 2021

Self Cite

View full text Add to dashboard Cite

A novel 4H-SiC MESFET was presented, and its direct current (DC), alternating current (AC) characteristics and power added efficiency (PAE) were studied. The novel structure improves the saturation current (Idsat) and transconductance (gm) by adding a heavily doped region, reduces the gate-source capacitance (Cgs) by adding a lightly doped region and improves the breakdown voltage (Vb) by embedding an insulated region (Si3N4). Compared to the double-recessed (DR) structure, the saturation current, the transconductance, the breakdown voltage, the maximum oscillation frequency (fmax), the maximum power added efficiency and the maximum theoretical output power density (Pmax) of the novel structure is increased by 24%, 21%, 9%, 11%, 14% and 34%, respectively. Therefore, the novel structure has excellent performance and has a broader application prospect than the double recessed structure.

show abstract

Improved MRD 4H-SiC MESFET with High Power Added Efficiency

Cited by 15 publications

References 21 publications

Novel polymeric phases proposed by cold-pressing SiC tubes

Novel polymeric phases proposed by cold-pressing SiC tubes

Spectral Thermal Spreading Resistance of Wide Bandgap Semiconductors in Ballistic-Diffusive Regime

A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region

Contact Info

Product

Resources

About