An in-line process monitoring method using electron beam induced substrate current

We have been developing the nano-beam secondary ion mass spectrometry (SIMS) apparatus, which can realize high spatial resolution and high efficiency of secondary ion detection. In this paper, the nano-beam SIMS method was introduced for the purpose of characterization for practical materials: contact holes. Contrasts of ion induced secondary electron (ISE) image and ion induced secondary ion (ISI) image were different. The difference was discussed with respect to information depth and chemical sensitivity. Elemental maps were obtained with nanodimension and the maps provided many aspects of the sample.

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Nano-dimensional analysis for practical materials using the nano-beam SIMS apparatus

Nojima

Toi

Maekawa

et al. 2004

e-J. Surf. Sci. Nanotechnol.

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An in-line process monitoring method using electron beam induced substrate current

Cited by 1 publication

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Nano-dimensional analysis for practical materials using the nano-beam SIMS apparatus

Nano-dimensional analysis for practical materials using the nano-beam SIMS apparatus

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