An Inkjet‐Printed, Ultralow Voltage, Flexible Organic Field Effect Transistor

Conti, Silvia; Lai, Stefano; Cosseddu, Piero; Bonfiglio, Annalisa

doi:10.1002/admt.201600212

Cited by 58 publications

(54 citation statements)

References 48 publications

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“…[87][88][89][90][91][92][93][94][95][96][97][98] The lack of dipoles and hydrophobic nature of most polymer dielectrics may be beneficial for organic semiconductor deposition as well as the electrical performance and stability of OFETs. [87][88][89][90][91]94,95] In these devices, the ultrathin crystalline organic semiconductor brings a significantly low level of semiconductor bulk and interface trap density. The sharp turn-on slope in the subthreshold region (i.e., steep SS) and small V th of the OFET enable the device to reach the saturation state at a smaller gate bias.…”

Section: Wwwadvancedsciencenewscommentioning

confidence: 99%

“…[106] Apart from high-k metal oxide dielectrics, applying solution-processed or initiated chemical vapor deposition (iCVD) polymer dielectrics with k value comparable or lower than SiO 2 can also reduce the operating voltage of OFETs. [87][88][89][90][91][92][93][94][95][96][97][98] The lack of dipoles and hydrophobic nature of most polymer dielectrics may be beneficial for organic semiconductor deposition as well as the electrical performance and stability of OFETs. [107] Although the dielectric constant of most polymers is intrinsically lower than that of metal oxides, several attempts can effectively operate the OFET at only a few volts.…”

Section: Wwwadvancedsciencenewscommentioning

confidence: 99%

“…For example, a series of ink-jetprinted OFETs based on cross-linked poly(vinyl alcohol) (PVA) or poly(4-vinylphenol) (PVP) dielectrics is able to operate at a 2-3 V gate bias even with a relatively low unit-area capacitance (10-40 nF cm −2 ). [87][88][89][90][91]94,95] In these devices, the ultrathin crystalline organic semiconductor brings a significantly low level of semiconductor bulk and interface trap density. Therefore, the devices exhibit both steep SS (<100 mV dec −1 ) and small V th (<0.5 V), which is the main reason for their low-voltage operation.…”

Section: Wwwadvancedsciencenewscommentioning

confidence: 99%

See 2 more Smart Citations

Organic Field‐Effect Transistor for Energy‐Related Applications: Low‐Power‐Consumption Devices, Near‐Infrared Phototransistors, and Organic Thermoelectric Devices

Ren

Yang

Gao

et al. 2018

Advanced Energy Materials

112

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The operating frequency of ring oscillators or radio-frequency identification tags made by OFETs have surpassed MHz. [27,28] With the growing level of integration and the operating frequency of OFETs, the power dissipation issue can no longer be ignored. Considering the material composition of most organic semiconductors, controlling the temperature rise within a reasonable range is important to avoid the unwanted degradation of organic materials and therefore maintain stable device operation. In addition, OFETs fabricated on flexi ble substrates somehow limit the use of conventional batteries. To avoid externally wiring the batteries, flexible OFET-based circuits can be expected to be self-powered by integrating them with organic solar cells, thermoelectric modules, or triboelectric nanogenerators. [29,30] All of these demands require OFETs operating with extremely low power consumption. Rapid progress has been made in this field, and research efforts have focused on reducing the operating voltage of OFETs, [31][32][33] enhancing the switching efficiency of transistors, [34][35][36][37] and demonstrating several novel device concepts for low-power applications. [38][39][40][41][42] Despite the switching function, OFETs can also be utilized in emerging energy-related applications, such as near-infrared (NIR) photodetectors and organic thermoelectric devices dueThe organic field-effect transistor (OFET) is the basic building block of integrated circuits. The charge carrier mobility and operating frequency of OFETs have continued to increase; therefore, the power dissipation of OFETs can no longer be ignored. Many research efforts have been made to develop low-power-consumption OFETs and complementary circuits. Despite the switching function, OFETs can also be utilized in emerging energy-related applications, such as near-infrared (NIR) photodetectors and organic thermoelectric devices. Organic phototransistors show considerably higher photo responsivity than other photodetector architectures due to field-effect charge modulation. The photoinduced gate modulating largely suppresses the dark current while simultaneously providing gain. These characteristics may favor NIR light detection and suggest that the organic phototransistor is a promising candidate for optoelectronic applications in the NIR regime. For organic thermoelectric applications, OFETs can work as a powerful tool for examining the charge and energy transport in the organic semiconductor, thus giving insight into organic thermoelectric studies. In this review, the authors highlight recent advances in OFET-related energy topics, including lowpower-consumption OFETs, NIR photodetectors, and organic thermoelectric devices. The remaining challenges in the field will also be discussed.

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Section: Wwwadvancedsciencenewscommentioning

confidence: 99%

Section: Wwwadvancedsciencenewscommentioning

confidence: 99%

Section: Wwwadvancedsciencenewscommentioning

confidence: 99%

See 1 more Smart Citation

Organic Field‐Effect Transistor for Energy‐Related Applications: Low‐Power‐Consumption Devices, Near‐Infrared Phototransistors, and Organic Thermoelectric Devices

Ren

Yang

Gao

et al. 2018

Advanced Energy Materials

112

View full text Add to dashboard Cite

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“…[6], [7] Among the different technologies, organic electronics is generally considered the most suitable for the complete exploitation of the potentialities of flexible electronics. Organic materials can be solution-processed at low temperatures by means of cost-effective techniques, [8]- [9] thus being perfectly suitable for large-area fabrication of electronic devices on flexible substrates, including plastic, [10]- [12] paper [13] and fabric. [14]- [16] Mechanical stability of organic electronic devices has been thoroughly explored in the last decade, in particular for Organic Field-Effect Transistors (OFETs), and it was found that, in this kind of structure, the mechanical sensitivity is mainly related to the morphological characteristics of the organic semiconductor film.…”

Section: Introductionmentioning

confidence: 99%

Morphology Influence on the Mechanical Stress Response in Bendable Organic Field‐Effect Transistors with Solution‐Processed Semiconductors

Lai

Temiño

Cramer

et al. 2017

Adv Elect Materials

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The results not only demonstrate that the response to bending is reliant on the morphological properties of the films, but also that it can be tuned according to the bar-shearing direction. The employment of the proposed approach for the development of devices with different extent of response to mechanical deformation, from bending sensors to strain-insensitive devices for applications needing electrical stability upon deformation, can be thus foreseen.

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“…www.advmatinterfaces.de complementary inverters with channel length of 20 µm using reverse-offset printing. [18] The thinnest possible dielectrics are made of self-assembled layers. For instance, 30-100 nm thick dielectric films made of a polymer and a crosslinker can withstand electric fields of up to 4 MV cm −1 .…”

mentioning

confidence: 99%

Gravure Printed Ultrathin Dielectric for Low Voltage Flexible Organic Field‐Effect Transistors

Vaklev

Steinke

Campbell

2019

Adv Materials Inter

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Dielectrics are a critical element of all electronic devices, being used not only directly in the gate layer of transistors, but also as insulators separating conducting interconnects, as well as passivation/protective layers. Crosslinkable and polymeric organic dielectrics can form large-area, highly uniform, and smooth films, which are highly flexible and solution processable, strong advantages for their use in flexible organic electronics. However, for the most challenging application of the gate dielectric, any material must ideally enable the formation of functional and stable films of thickness > 100 nm. This is driven by two requirements. First, low voltage operation, typically > 5 V, is due to the battery supply in portable applications along with integration of inputs and outputs with silicon based complementary metal-oxide-semiconductor (CMOS) technology. For some biomedical sensors, there is the additional constraint of the electrochemical window of water (1 V). Second, the channel length L to dielectric thickness d ratio required to achieve transistor saturation (typically L/d >> 10) is a requirement for use in digital logic applications. Short channel lengths are needed for high frequency operation, and hence with the resolution limit of conventional photolithography being of order of micrometers, dielectric thickness needs to scale accordingly into the sub-100 nm range.There has been considerable activity toward the development of printed organic field effect transistors (OFETs). Hubler and Ellinger published three reports on fully printed transistors on foil, [3][4][5] where they used only additive techniques such as screen, gravure, and flexographic printing to fabricate piezoelectric loudspeakers based on transistors in a roll-to-roll process. Miniaturization of transistor devices using roll-to-roll compatible methods for fabrication has also been another important trend over the last couple of years. Vilkman et al. demonstrated the complete roll-to-roll manufacturing of self-aligned transistors with 25-70 µm channel lengths. [1] The authors used a combination of flexography, gravure printing, metal evaporation combined with lift-off and photolithography to produce ≈80 m of plastic foil with thousands of devices. Higgins et al. used printing and nanoimprint lithography to fabricate selfaligned transistors and inverters with sub-micrometer channel length in a batch process. [6] The dielectric and semiconductors were deposited with forward gravure and/or inkjet printing. Kang et al. scaled transistor dimensions by gravure printing 10 µm lines for gate electrodes with self-aligned source-drain electrodes. [7] Park et al. reported printing silver electrodes in Organic electronics requires dielectrics which can be processed over large areas at low temperature in ambient using simple solution based techniques. Here a crosslinkable acrylate-based organic dielectric is reported, which is gravure printable on plastic substrates, patternable by conventional photolithography, and can form electrically funct...

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An Inkjet‐Printed, Ultralow Voltage, Flexible Organic Field Effect Transistor

Cited by 58 publications

References 48 publications

Organic Field‐Effect Transistor for Energy‐Related Applications: Low‐Power‐Consumption Devices, Near‐Infrared Phototransistors, and Organic Thermoelectric Devices

Organic Field‐Effect Transistor for Energy‐Related Applications: Low‐Power‐Consumption Devices, Near‐Infrared Phototransistors, and Organic Thermoelectric Devices

Morphology Influence on the Mechanical Stress Response in Bendable Organic Field‐Effect Transistors with Solution‐Processed Semiconductors

Gravure Printed Ultrathin Dielectric for Low Voltage Flexible Organic Field‐Effect Transistors

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