An Integrated a-IGZO UHF Energy Harvester for Passive RFID Tags

Chasin, Adrian; Volskiy, Vladimir; Libois, Michael; Myny, Kris; Nag, Manoj; Rockelé, Maarten; Vandenbosch, Guy A. E.; Genoe, Jan; Gielen, Georges; Heremans, Paul

doi:10.1109/ted.2014.2340462

Cited by 51 publications

(31 citation statements)

References 13 publications

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“…Consequently, RFID technology has evolved from simple passive tags to smart tags with newly introduced features such as sensing and on-tag data processing and intelligent power management [57]. Research progress has covered the designs of RFID tags with RF energy harvesting in rectenna [57]- [59], rectifier [60], [61], RF-to-DC converter [62], [63], charge pump [64]- [66] and power harvester [67]- [69].…”

Section: Existing Applications Of Rf Energy Harvestingmentioning

confidence: 99%

Wireless Networks With RF Energy Harvesting: A Contemporary Survey

Wang

Niyato

et al. 2015

IEEE Commun. Surv. Tutorials

2,323

1,349

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Radio frequency (RF) energy transfer and harvesting techniques have recently become alternative methods to power the next generation wireless networks. As this emerging technology enables proactive energy replenishment of wireless devices, it is advantageous in supporting applications with quality of service (QoS) requirements. In this paper, we present a comprehensive literature review on the research progresses in wireless networks with RF energy harvesting capability, referred to as RF energy harvesting networks (RF-EHNs). First, we present an overview of the RF-EHNs including system architecture, RF energy harvesting techniques and existing applications. Then, we present the background in circuit design as well as the state-of-the-art circuitry implementations, and review the communication protocols specially designed for RF-EHNs. We also explore various key design issues in the development of RF-EHNs according to the network types, i.e., single-hop networks, multi-antenna networks, relay networks, and cognitive radio networks. Finally, we envision some open research directions.Index Terms-RF energy harvesting, simultaneous wireless information and power transfer (SWIPT), receiver operation policy, beamforming, communication protocols, RF-powered Cognitive radio network.1553-877X (c) 2 transmission. Traditionally, free-space beaming and antennas with large apertures are used to overcome propagation loss for large power transfer. For example, in 1960's, the authors in [15] demonstrate a small helicopter hovering at a height of 50 feet, powered by an RF source with a DC power supply of 270W operating on 2.45GHz on the ground. In [16], the authors demonstrate a space-to-earth power transfer system using gigantic transmit antenna arrays at a satellite and receive antenna arrays at a ground station. For transmit power of 2.7GW, the power transfer efficiency is estimated to be 45% over a transfer distance of 36000km. During the past decade, with the development in RF energy harvesting circuit, low power transfer for powering mobile terminals in wireless communication systems began to attract increasing attention [17], [18]. The authors in [17] propose a network architecture for RF charging stations, overlaying with an uplink cellular network. In [18], a harvest-then-transmit protocol is introduced for power transfer in wireless broadcast system. Moreover, various modern beamforming techniques are employed to improve power transfer efficiency [18]-[20] for mobile applications.It is until recently that the dual use of RF signals for delivering energy as well as for transporting information has been advocated [21], [22]. Simultaneous wireless information and power transfer (SWIPT) [23] is proposed for delivering RF energy, usually in a low power region (e.g., for sensor networks). SWIPT provides the advantage of delivering controllable and efficient on-demand wireless information and energy concurrently, which offers a low-cost option for sustainable operations of wireless systems without hardware modification on the ...

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Section: Existing Applications Of Rf Energy Harvestingmentioning

confidence: 99%

Wireless Networks With RF Energy Harvesting: A Contemporary Survey

Wang

Niyato

et al. 2015

IEEE Commun. Surv. Tutorials

2,323

1,349

View full text Add to dashboard Cite

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“…For example, metal-oxide surface is very sensitive to the process conditions, such as the oxygen partial pressure and RF sputtering power during the deposition process. Yet, the limited studies so far already showed a great potential to realize high-performance IGZO diodes with large Schottky barrier height [8][9][10], high rectification ratio [10][11][12], small ideality factor [8,13,14], high frequency operation [10,15,16], low frequency noise comparable to that of silicon based Shottky diodes [17], and mechanical flexibility [8,13,16]. Most studies show that as deposited IGZO Schottky diode have low performance while annealing in oxygen atmosphere at ~200 o C can effectively improve the diode performance, e.g.…”

Section: Introductionmentioning

confidence: 99%

High performance InGaZnO‐based Schottky diodes fabricated at room temperature

Yan

Xin

et al. 2016

Phys. Status Solidi C

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Recently, Indium gallium zinc oxide (InGaZnO or IGZO) has attracted much attention for flexible and transparent electronics, because of its superior electric properties, optical transparency and low processing temperature. In this work, Schottky diodes with a structure of Pd/IGZO/Ti/Au were fabricated by radio‐frequency magnetron sputtering at room temperature without any thermal treatment. The optimised diode with a 66‐nm‐IGZO layer shows an extremely large barrier height (1.02 eV), a very high rectification ratio (> 8.5 × 107), and a close to unit ideality factor (1.23). Our results suggest that Pd and IGZO can form very high quality Schottky contact with a large barrier height, extremely low defects density and high uniformity. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Metal-oxide semiconductors, on the other hand, have already been incorporated into flexible electronics in both academia and industry 7,8,21,22 . To date, most research on metaloxide semiconductors has focused on thin-film transistors (TFTs) 7,8,[21][22][23] , and little has been reported on diodes [24][25][26][27][28][29][30] 27), but these were all made on glass substrate using high-temperature annealing processes and hence not applicable to flexible substrates. To the best of our knowledge, the highest frequency obtained on plastic substrates was 27 MHz by IGZOCu 2 O diodes 10 .…”

mentioning

confidence: 99%

Flexible indium–gallium–zinc–oxide Schottky diode operating beyond 2.45 GHz

et al. 2015

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Mechanically flexible mobile phones have been long anticipated due to the rapid development of thin-film electronics in the last couple of decades. However, to date, no such phone has been developed, largely due to a lack of flexible electronic components that are fast enough for the required wireless communications, in particular the speed-demanding front-end rectifiers. Here Schottky diodes based on amorphous indium-gallium-zinc-oxide (IGZO) are fabricated on flexible plastic substrates. Using suitable radio-frequency mesa structures, a range of IGZO thicknesses and diode sizes have been studied. The results have revealed an unexpected dependence of the diode speed on the IGZO thickness. The findings enable the best optimized flexible diodes to reach 6.3 GHz at zero bias, which is beyond the critical benchmark speed of 2.45 GHz to satisfy the principal frequency bands of smart phones such as those for cellular communication, Bluetooth, Wi-Fi and global satellite positioning.

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An Integrated a-IGZO UHF Energy Harvester for Passive RFID Tags

Cited by 51 publications

References 13 publications

Wireless Networks With RF Energy Harvesting: A Contemporary Survey

Wireless Networks With RF Energy Harvesting: A Contemporary Survey

High performance InGaZnO‐based Schottky diodes fabricated at room temperature

Flexible indium–gallium–zinc–oxide Schottky diode operating beyond 2.45 GHz

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