An integrated air-gap-capacitor pressure sensor and digital readout with sub-100 attofarad resolution

Kung, Jaeha; Lee, H.-S.

doi:10.1109/84.186391

Cited by 49 publications

(17 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…By choosing suitable values for C 2 , V sen , and V ref , it is possible to detect capacitance variations on the order of tens of attofarads (1 aF = 10 -18 F). [71] A practical implementation of this technique is reported by Gola et al [72] The most important features of this circuit are summarized in Table 17.10. …”

Section: Impedance Variationmentioning

confidence: 99%

17 Interface Circuitry and Microsystems

Malcovati

Maloberti

2006

MEMS: A Practical Guide to Design, Analysis, and Applications

View full text Add to dashboard Cite

Section: Impedance Variationmentioning

confidence: 99%

17 Interface Circuitry and Microsystems

Malcovati

Maloberti

2006

MEMS: A Practical Guide to Design, Analysis, and Applications

View full text Add to dashboard Cite

“…In recent years substantial research has been carried out on micromachined diaphragm type pressure sensors [1][2][3][4][5]. These sensors are fabricated by new manufacturing technologies such as bulk micromachining [6,7] or surface micromachining [8,9].…”

Section: Introductionmentioning

confidence: 99%

Investigation on better Sensitive Silicon based MEMS Pressure Sensor for High Pressure Measurement

K.J¹,

Raveendran²,

Komaragiri³

2013

IJCA

View full text Add to dashboard Cite

The paper focuses on the modeling and analysis of MEMS piezoresistive pressure sensors based on shape and performance parameters. The Different shapes of diaphragms namely square, rectangular and circular diaphragms made of silicon were modeled and their performance parameters namely deflection and stress were analyzed. The simulations performed using the FEM software Intellisuite® proved that the better shape for the design of a piezoresistive pressure sensor is one with the square shaped diaphragm. The square shaped diaphragm with varying thickness is simulated and tested till their burst pressures. The work is then high lightened on the modeling of MEMS piezoresistive pressure sensors with two different square shaped diaphragms, one with silicon and the second with silicon and silicon dioxide stack using the FEM software Intellisuite®, and comparing the performance parameters of the two sensors. The diaphragm deflection in silicon pressure sensor was found to be less when compared to SOI pressure sensors, and the SOI pressure sensor is capable of giving more output voltage and exhibits more voltage sensitivity. The thickness of SOI layer plays an integral part of sensor design. Unlike the silicon pressure sensor, the SOI pressure sensor is able to operate at large pressures by changing the dimension of the diaphragm while maintaining appreciable voltage sensitivity.

show abstract

“…The minimum DC bias for which pull-in will occur over the entire 0.5µm air gap, using ( 9), is 45V. From the beam approximation of equation ( 8), we predict a pull-in of around 70V.…”

Section: Stability Under DC and Ac Signalmentioning

confidence: 95%

A surface micromachined microtactile sensor array

Gray

Fearing

Proceedings of IEEE International Conference on Robotics and Automation

150

View full text Add to dashboard Cite

This paper discusses the design and testing of an eight-by-eight tactile capacitive array sensor for detection of sub-millimeter features and objects, where the entire sensor array is smaller than normal human spatial resolution of 1mm. Each square tactel is less than 100µm on a side, with similar spacing between elements. The structural material was doped polysilicon with an air gap dielectric of 0.5µm. A thin (50-80µm) protective layer of silicone rubber was adhered to the polysilicon surface of the sensor to provide interpolation of normal loads between elements. The sensors were tested and possessed good spatial uniformity, the capability of detecting millinewton forces, and good interpolation between elements. The sensors had severe hysteresis problems, but no detectable proximity effects.

show abstract

An integrated air-gap-capacitor pressure sensor and digital readout with sub-100 attofarad resolution

Cited by 49 publications

References 11 publications

17 Interface Circuitry and Microsystems

17 Interface Circuitry and Microsystems

Investigation on better Sensitive Silicon based MEMS Pressure Sensor for High Pressure Measurement

A surface micromachined microtactile sensor array

Contact Info

Product

Resources

About