An Integrated Gate Driver for E-mode GaN HEMTs with Active Clamping for Reverse Conduction Detection

Zhang, Wei Jia; Leng, Yahui; Yu, Jingshu; Lu, Yu Shen; Cheng, Chu Yao; Ng, Wai Tung

doi:10.1109/ispsd.2019.8757616

Cited by 11 publications

(2 citation statements)

References 5 publications

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“…Among these effects are signal reflections, which can trigger false ON/OFF regimes and cause the gate to unbalance [21] whereas radiating a large amount of radio frequency (RF) electromagnetic (EM) interferences (EMI) [22][23]. This is why, current extensive research focuses on studying active monitoring and control methods for the GaN transistors [24][25], via simulation [26] [27] and equivalent circuit experiments since integrated circuits (ICs) based on GaN technology involves a more difficult process [28][29] as compared with its predecessor Silicon chips [30] or to the more exotic technology like diamond based semiconductors [31] [32]. Additionally, since the power designs based on GaN transistor technologies are very sensitive to external monitoring circuits that may limit the design performance [33], galvanically isolated sensors [34] [35] with magnetic coupling [36][37] [38] are the next promising solution.…”

Section: Introductionmentioning

confidence: 99%

GaN Transistors’ Radiated Switching Noise Source Evidenced by Hall Sensor Experiments Toward Integration

Marsic,

Faramehr,

Fleming

et al. 2024

IEEE Access

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Wide bandgap Gallium Nitride (GaN) technology promises to deliver the next generation of power transistors capable of high energy density and compact design integration however, without active monitoring high failing rates are recorded due to its instability to design parameter variations. Moreover, the electromagnetic (EM) radiofrequency (RF) emissions due to GaN power switching require extra design resources. Considering the extensive research area dedicated to galvanic isolated magnetic sensors for GaN wafer monolithic integration with usage in power monitoring, this study investigates the conditions that a Hall sensor is required to meet when operating in close proximity of a GaN transistor. Through considerable experimental testing, it was determined that the sensor requires a magnetic field starting from ±1 mT when interfaced with a microcontroller. Additionally, since the GaN transistor's EM RF switching noise was one of the most monitored parameters during the experiments, it was discovered that it is proportional to the transistor's current transfer area whereas its magnitude is due to electrical current required by the load. As a result of these findings, the EM radiated switching noise may apply to all electrical switches and provide a significant advantage when designing for EM compatibility (EMC).

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Section: Introductionmentioning

confidence: 99%

GaN Transistors’ Radiated Switching Noise Source Evidenced by Hall Sensor Experiments Toward Integration

Marsic,

Faramehr,

Fleming

et al. 2024

IEEE Access

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“…However, the minimum resolution of driving signal is 15ns, which is unacceptable for VHF operation. To improve the detection resolution, the reverse conduction duration is directly detected at the switching node [24]. Based on the detected duration, the driving signal is updated by a close loop correction circuit in the next switching cycle.…”

Section: Introductionmentioning

confidence: 99%

Linear Equivalent Model for VHF Class Φ₂ Inverter Based on Spectrum Quantification Method to Reduce GaN Reverse Conduction Loss

et al. 2021

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Reverse conduction loss of GaN high electron mobility transistors (HEMTs) in very high frequency (VHF) converters is non-neglectable due to the absence of body diode. To reduce the reverse conduction time, this paper proposes a linear equivalent model for class Φ2 inverter to derive optimal duty cycles for different working conditions. The proposed model is derived from frequency-domain perspective, which simplifies the derivation process and provides an intuitive physical insight for class Φ2 inverter. Firstly, the power switch is modeled as a current source according to time-domain expressions of inductor current, which simplifies the circuit to a linear network. Based on quantitative analysis of the current source spectrum characteristics, the linear network response to the current excitation is derived, which forms the linear equivalent model. Then, drain voltage of the main switch under different working conditions is obtained. With the zero-crossing point of the drain voltage, numerical solutions of the optimal duty cycles are calculated. Finally, the optimal duty cycles are implemented with a high-resolution duty cycle generation circuit in a 27.12MHz prototype, which achieves not only a peak efficiency of 93.6% at full load, but also higher efficiency over the whole load and input voltage range compared to conventional fixed duty cycle.

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A GaN driver IC with novel highly digitally adaptive dead-time control for Synchronous Rectifier Buck Converter

Chiu

Wang

et al. 2020

2020 IEEE Energy Conversion Congress and Exposition (ECCE)

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An Integrated Gate Driver for E-mode GaN HEMTs with Active Clamping for Reverse Conduction Detection

Cited by 11 publications

References 5 publications

GaN Transistors’ Radiated Switching Noise Source Evidenced by Hall Sensor Experiments Toward Integration

GaN Transistors’ Radiated Switching Noise Source Evidenced by Hall Sensor Experiments Toward Integration

Linear Equivalent Model for VHF Class Φ₂ Inverter Based on Spectrum Quantification Method to Reduce GaN Reverse Conduction Loss

A GaN driver IC with novel highly digitally adaptive dead-time control for Synchronous Rectifier Buck Converter

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An Integrated Gate Driver for E-mode GaN HEMTs with Active Clamping for Reverse Conduction Detection

Cited by 11 publications

References 5 publications

GaN Transistors’ Radiated Switching Noise Source Evidenced by Hall Sensor Experiments Toward Integration

GaN Transistors’ Radiated Switching Noise Source Evidenced by Hall Sensor Experiments Toward Integration

Linear Equivalent Model for VHF Class Φ2 Inverter Based on Spectrum Quantification Method to Reduce GaN Reverse Conduction Loss

A GaN driver IC with novel highly digitally adaptive dead-time control for Synchronous Rectifier Buck Converter

Contact Info

Product

Resources

About

Linear Equivalent Model for VHF Class Φ₂ Inverter Based on Spectrum Quantification Method to Reduce GaN Reverse Conduction Loss