An Integrated Wideband Power Amplifier for Cognitive Radio

Chen, Yi-Jan Emery; Yang, Liyuan; Yeh, W.-P.

doi:10.1109/tmtt.2007.906497

Cited by 42 publications

(11 citation statements)

References 13 publications

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“…But the impedance value changes slightly, so we choose average value as Zopt. Then design a matching network between 50Ω and Zopt inside the constant Q contour [11].Here the optimum load shows in Fig. 4 is about 10.5+j*1.25.…”

Section: Broadband Matching Networkmentioning

confidence: 99%

A Broadband Power Amplifier Applied in GSM/TD-SCDMA/WLAN System

Ding

Luo

2017

Lecture Notes in Computer Science

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A broadband power amplifier operating from 0.8GHz to 2.4GHz is designed in 0.13-µm SiGe HBT process. The power amplifier adopts pseudo-differential structure, adaptive bias control technique, broadband matching network and compensated matching technique to optimize linearity, efficiency and bandwidth. The simulation results show that the maximum power gain is 25 dB, 3-dB bandwidth is 690MHz-2470MHz. P1dB, Psat and PAE are better than 26dBm, 29dBm and 38%, respectively. The chip area of DAC occupies 2.56mm 2 with pads.

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Section: Broadband Matching Networkmentioning

confidence: 99%

A Broadband Power Amplifier Applied in GSM/TD-SCDMA/WLAN System

Ding

Luo

2017

Lecture Notes in Computer Science

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“…The output impedance transformation network of a PA needs to have a large impedance conversion ratio when an output power of over 0.5 W is required under low supply voltages [8]. Large transistor size with high drain parasitic capacitance leads to small resistance and reactance in for optimum output power or efficiency match.…”

Section: Power-combining Transformers: Distributed Active Transfomentioning

confidence: 99%

A 1.2-V 90-nm Fully Integrated Compact CMOS Linear Power Amplifier Using the Coupled L-Shape Concentric Vortical Transformer

Yang

Chen

2014

IEEE Trans. Microwave Theory Techn.

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This paper presents a 90-nm fully integrated CMOS linear power amplifier (PA) using a coupled L-shape concentric vortical transformer (CL-CVT) for the fourth-generation long-term evolution (LTE) communication standard. Using the proposed output combining CL-CVT architecture, the outer diameter required by the power combiner is reduced by 66% compared to the distributed active transformer with similar performance. Moreover, the PA is able to efficiently combine four push-pull output stages and achieve nearly constant power over several LTE bands with a total chip area less than 1 mm . With a 1.2-V supply voltage, the PA delivers 27.3-dBm maximum output power with a peak drain efficiency of 47% at 2.4 GHz. Using a 20-MHz LTE 16-QAM test signal, the PA achieves 24.6% power-added efficiency at an output power level of 22 dBm and passes the spectral requirements defined by the LTE standard without using any pre-distortion or calibration techniques. Index Terms-CMOS power amplifier (PA), fourth generation (4G), linear, long-term evolution (LTE), power combiner, transformer, wideband.0018-9480

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“…A basic theory to design a LD drive amplifier is using an output matching network to transform the load impedance to the optimum load impedance of the power transistor at working frequency. The optimum load impedance can be found using load‐pull technology . The input matching network is designed to transform the input impedance to 50 Ω.…”

Section: Circuit Designmentioning

confidence: 99%

Design of 64‐mA laser diode drive amplifier for 2.4‐GHz radio‐over‐fiber transmission systems

Chen

Huang

2014

Micro & Optical Tech Letters

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This article presented the design of a large drive current laser diode amplifier for 2.4-GHz radio-over-fiber transmission systems in TSMC 0.18-mm CMOS technology. The proposed drive amplifier adopted a single-ended two-stage amplifier structure with the operating voltages of 1.8 and 3.6 V. The technique of dynamic bias is used to enhance linearity. The measurement results show that the linear amplifier achieves the power gain of 16.9 dB, the output 1-dB compression point of 20.1 dBm at 2.4 GHz. The maximum output modulation current is up to 64 mA. The components are all on chip including the input and output matching network, and the total chip area is 1.0 3 0.73 mm 2 .

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An Integrated Wideband Power Amplifier for Cognitive Radio

Cited by 42 publications

References 13 publications

A Broadband Power Amplifier Applied in GSM/TD-SCDMA/WLAN System

A Broadband Power Amplifier Applied in GSM/TD-SCDMA/WLAN System

A 1.2-V 90-nm Fully Integrated Compact CMOS Linear Power Amplifier Using the Coupled L-Shape Concentric Vortical Transformer

Design of 64‐mA laser diode drive amplifier for 2.4‐GHz radio‐over‐fiber transmission systems

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