An inter-comparison of efficiency-calibration techniques for semiconductor X-ray detectors

Campbell, John L.; McNelles, L.A.

doi:10.1016/0029-554x(75)90270-0

Cited by 70 publications

(2 citation statements)

References 47 publications

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“…Cross sections measured for low-Z2 elements may be used for simple calibration of x-ray detectors in the low-energy region where standardized sources are unavailable; and therefore, calibration cannot be done using techniques outlined in the literature. [17][18][19][20] With these ideas in mind we have measured K-shell x-ray production cross sections for 0.4-2.4 MeV protons and alpha-particles on llNa, 12Mg, 13A1, 15P, 16S, and 17C1. Energy step sizes were chosen for the low-energy IH ion data so that the energy per mass coincided with the 4He ion data.…”

Section: Introductionmentioning

confidence: 99%

K-Shell X-Ray Production of Na, Mg, Al, P, S, and Cl by 0.4-2.4 MeV 11H and 42He Ions

Rice

Button

Duggan

et al. 1979

IEEE Trans. Nucl. Sci.

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K-shell x-ray cross sections for thin solid targets of llNa, 12Mg, 13A1, 15P, 16S, and 17C1 have been measured for 0.4-2.4 MeV H and He ions. Ratios of a(He)/4a(H) are determined as a function of energy/ mass to reduce the experimental uncertainties. The absolute cross sections and the cross section ratios are compared to theoretical predictions of the binary encounter approximation, the plane wave Born approximation, and the perturbed stationary state theory with Coulomb deflection (CPSS). It is shown that the CPSS theory with an approximate correction for relativistic effects gives good estimates of the experimental data.

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Section: Introductionmentioning

confidence: 99%

K-Shell X-Ray Production of Na, Mg, Al, P, S, and Cl by 0.4-2.4 MeV 11H and 42He Ions

Rice

Button

Duggan

et al. 1979

IEEE Trans. Nucl. Sci.

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“…The most difficult problem associated with the Si(Li) detector was in calibrating its efficiency as a function of energy. One normally measures efficiencies by comparing the detector response to standard radioactive sources [64).…”

Section: Theorymentioning

confidence: 99%

Charge-state dependence ofM-shell x-ray production inHo67by 2–12-MeV carbon ions

Sun

Duggan

et al. 1995

Phys. Rev. A

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carbon ions, with and without K-shell vacancies, were measured using a windowless Si(Li) x-ray detector with a full-width-at-half-maximum resolution of 135 eV at 5.9 keV. Carbon ions of different charge states were produced using a postacceleration, nitrogen gas stripping cell. The carbon ions were then magnetically analyzed to select the desired charge state and energy before entering the target chamber. The total M-shell and Ms, Mn, P, and M y x-ray cross sections were measured. The electron-capture (EC) contributions as well as the direct-ionization (DI) contributions can be determined by making a comprehensive study of the projectilecharge-state dependence of the target x-ray production cross sections for targets in which the single-collision realm is maintained. In this paper, both EC and DI contributions and the total M-shell x-ray production cross sections are compared to both the first Born theory and to the perturbed-stationary-state theory with energyloss, Coulomb-deflection, and relativistic corrections. PACS number(s): 34.70.+e, 34.50.Fa

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A Method for Determining Detector Efficiencies In-Situ by Variation of the Radiation Incidence Angle

Wernisch

Schönthaler

August

1990

phys. stat. sol. (a)

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The method of semiconductor detector calibration by variation of the radiation incidence angle is discussed in detail and further developed with regard to the use of particle or radiation beam excited samples as radiation sources. Special aspects introduced by this generalization of the theory, such as geometrical considerations or the choice of appropriate instrumental settings, are discussed in detail to provide the user with a comprehensive and ready-to-use theory of this method. The model described combines the advantages of the method of radiation incidence angle variation, viz., that neither a reference detector nor calibrated radiation standards are needed, with those offered by the possibility to use radiation usually generated in the instrument, e.g. electron impact caused radiation in an electron microprobe, for the determination of the detector efficiency. Die Methode der Variation des Einfallswinkels der Strahlung zur Ermittlung der Detektoreffizienz wird eingehend besprochen und hinsichtlich der Verwendung von Proben, die durch TeilchenbeschuD oder Primarstrahlung zur Strahlungsemission angeregt werden, als Strahlungsquellen weiterentwickelt. Spezielle Aspekte, die sich aus dieser Verallgemeinerung der Theorie ergeben, wie etwa Uberlegungen zur Geometrie oder zur Wahl entsprechender Anregungsbedingungen, werden im Detail besprochen, woraus sich eine umfassende und anwenderorientierte Theorie ergibt. Das beschriebene Modell vereinigt die Vorteile der Methode der Einfallswinkelvariation, d. h. daD weder ein Referenzdetektor noch geeichte Strahlungsquellen benotigt werden, mit jenen, die sich aus der Moglichkeit ergeben, als Strahlung fur die Bestimmung der Detektoreffizienz die iiblicherweise in einem Gerat entstehende Strahlung, etwa durch ElektronenbeschulJ entstehende Rontgenstrahlung in einem Elektronenstrahlmikroanalysegerat, zu verwenden.

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An inter-comparison of efficiency-calibration techniques for semiconductor X-ray detectors

Cited by 70 publications

References 47 publications

K-Shell X-Ray Production of Na, Mg, Al, P, S, and Cl by 0.4-2.4 MeV 11H and 42He Ions

K-Shell X-Ray Production of Na, Mg, Al, P, S, and Cl by 0.4-2.4 MeV 11H and 42He Ions

Charge-state dependence ofM-shell x-ray production inHo67by 2–12-MeV carbon ions

A Method for Determining Detector Efficiencies In-Situ by Variation of the Radiation Incidence Angle

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