An Intra-cavity bottom emitting 1325 nm VCSEL using GaInAs / GaInP MQWs and AlGaInAs / InP DBRs for epitaxial fabrication

Abstract

In this paper, a bottom emitting Ga 0.586 In 0.414 As / Ga 0.252 In 0.748 P MQW Intra-cavity Vertical Cavity Surface Emitting Laser (VCSEL) capable of emitting light output at 1325 nm has been designed. After a number of computations of the material gain and band gap energy it has been found that the ternary compound of Ga 0.586 In 0.414 As as the quantum well material and the lattice matched ternary compound material Ga 0.252 In 0.748 P as the barrier material are suitable for operating at 1325 nm. Ga 0.252 In 0.748 P has been used for the 2 SCH layers which is also lattice matched. Si doped Al 0.6 In 0.4 As has been used as the lattice matched p-cladding material and C doped Al 0.5 In 0.5 As has been used as the n-cladding material. The design has been based on building the laser on an InP substrate which is lattice matched with the bottom DBR layers made of lattice matched Al 0.26 Ga 0.21 In 0.53 As / InP (48 pairs). The top DBR structure has been designed using Al 0.26 Ga 0.21 In 0.53 As / InP (80 pairs) which is also lattice matched with the p-cladding material and the active region material. This design is aimed at fabricating the VCSEL using the widely used epitaxial technologies. The performance characteristics of the designed VCSEL show expected performance.