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In this work, an integrated single chip dual cavity VCSEL has been designed which comprises an electrically pumped 980 nm bottom VCSEL section fabricated using GaInAs/AlGaAs MQW active region and a 1550 nm top VCSEL section constructed using GaInAs/AlGaInAs MQW active region but optically pumped using half of the produced 980 nm light entering into it from the electrically pumped bottom cavity. In this design, the active region of the intracavity structure 980 nm VCSEL consists of 3 quantum wells (QWs) using Ga0.847In0.153As, 2 barriers using Al0.03Ga0.97As, and 2 separate confinement heterostructures (SCH) using the same material as the barrier. The active region of the top emitting 1550 nm VCSEL consists of 3 QWs using Ga0.47In0.52As, 2 barriers using Al0.3Ga0.17In0.53As, and 2 SCHs using the same material as the barrier. The top DBR and the bottom DBR mirror systems of the 1550 nm VCSEL section plus the top and bottom DBR mirror systems of the 980 nm VCSEL section have been formed using GaAs/Al0.8Ga0.2As. Computations show that the VCSEL is capable of producing 8.5 mW of power at 980 nm from the bottom side and 2 mW of power at the 1550 nm from top side.

In this paper, a bottom emitting Ga 0.586 In 0.414 As / Ga 0.252 In 0.748 P MQW Intra-cavity Vertical Cavity Surface Emitting Laser (VCSEL) capable of emitting light output at 1325 nm has been designed. After a number of computations of the material gain and band gap energy it has been found that the ternary compound of Ga 0.586 In 0.414 As as the quantum well material and the lattice matched ternary compound material Ga 0.252 In 0.748 P as the barrier material are suitable for operating at 1325 nm. Ga 0.252 In 0.748 P has been used for the 2 SCH layers which is also lattice matched. Si doped Al 0.6 In 0.4 As has been used as the lattice matched p-cladding material and C doped Al 0.5 In 0.5 As has been used as the n-cladding material. The design has been based on building the laser on an InP substrate which is lattice matched with the bottom DBR layers made of lattice matched Al 0.26 Ga 0.21 In 0.53 As / InP (48 pairs). The top DBR structure has been designed using Al 0.26 Ga 0.21 In 0.53 As / InP (80 pairs) which is also lattice matched with the p-cladding material and the active region material. This design is aimed at fabricating the VCSEL using the widely used epitaxial technologies. The performance characteristics of the designed VCSEL show expected performance.