An Introduction to Physics and Technology of Thin Films

Wagendristel, A.; Wang, Yuming

doi:10.1142/2227

Cited by 12 publications

(5 citation statements)

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“…5,6 In almost all of the film growth processes, oxide interfacial layers are formed during the deposition of high-dielectrics directly on Si. 12 Unfortunately, the interfacial chemical state of HfO 2 /Si films has not yet been sufficiently identified. Some groups suggested that Si diffusion into the growing HfO 2 film results in the formation of Hf-silicate [6][7][8] or that O diffusion into Si results in the formation of SiO 2 , 9 in contrast to thermodynamic data reported by Hubbard and Schlom.…”

mentioning

confidence: 99%

Chemical structure of the interface in ultrathin HfO2/Si films

Lee

Cho

et al. 2004

Applied Physics Letters

128

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mentioning

confidence: 99%

Chemical structure of the interface in ultrathin HfO2/Si films

Lee

Cho

et al. 2004

Applied Physics Letters

128

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“…16 Subsequently, a dense, homogeneous, highly corrosion-resistant film results. At low pressure, the collision frequency between particles decreases as the mean free path increases.…”

Section: Resultsmentioning

confidence: 99%

“…Redeposition of these particles is much lower at small deposition pressures. 16 Subsequently, a dense, homogeneous, highly corrosion-resistant film results.…”

Section: Resultsmentioning

confidence: 99%

Influence of Carbon Sputtering Conditions on Corrosion Protection of Magnetic Layer by an Electrochemical Technique

Balakrisnan¹,

Tomčik

Blackwood³

2002

J. Electrochem. Soc.

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For high density magnetic recording, it is necessary to protect the magnetic layer from wear and corrosion with a thin carbon overcoat. On ultrasmooth disk substrates, magnetron sputtering is still the preferred technique because it can provide protective carbon layers as thin as 4 nm. Degradation of the magnetic layer occurs in the atmosphere and during hard disk operation; thus, the carbon-based overcoat functions as an indispensable component in protecting the essential magnetic layer. Moreover, carbon overcoat quality plays a vital role in the strong demand to reduce the flying height between a disk and read/write head, which in turn enhances the density of recording. The impact of sputtering conditions on the quality of deposited amorphous hydrogenated and nitrogenated carbon was assessed by the electrochemical measurement of the linear polarization resistance. The film's polarization resistance was correlated to its porosity, and a statistical method was developed to allow easy comparison of results in the data analysis. The results obtained suggest that the best overcoats are formed with a substrate voltage bias of Ϫ120 V, a very low deposition pressure of 0.9 mTorr, a dc magnetron sputtering power of 2.8 W/cm 2 , and with incorporation of ethylene gas in the Ar ϩ N 2 gas mixture. The filling of film voids increased with ion flux and decreased with increasing deposition rate.

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“…Numerous literature approaches to achieve film uniformity were first investigated. 2,19,20 Preliminary experiments revealed that the thin glove material was affected by high contact pressure, elevated temperature, and prolonged solvent wetting. Therefore, the final procedure had to have conditions that allowed coating to be completed within 10 min, near room temperature, and at moderate vacuum pressure.…”

Section: Gloves and Chemicalsmentioning

confidence: 99%

Analysis of Captan on Nitrile Glove Surfaces Using a Portable Attenuated Total Reflection Fourier Transform Infrared Spectrometer

Phalen

Hee

2005

Appl Spectrosc

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This study developed a method to produce uniform captan surface films on a disposable nitrile glove for quantitation with a portable attenuated total reflection Fourier transform infrared (ATR-FTIR) spectrometer. A permeation test was performed using aqueous captan formulation. Uniform captan surface films were produced using solvent casting with 2-propanol and a 25 mm filter holder connected to a vacuum manifold to control solvent evaporation. The coefficient of variation of the reflectance at 1735 +/- 5 cm(-1) was minimized by selection of the optimum solvent volume, airflow rate, and evaporation time. At room temperature, the lower to upper quantifiable limits were 0.31-20.7 microg/cm2 (r = 0.9967; p < or = 0.05) for the outer glove surface and 0.55-17.5 microg/cm2 (r = 0.9409; p < or = 0.05) for the inner surface. Relative humidity and temperature did not affect the uncoated gloves at the wavelength of captan analysis. Glove screening using ATR-FTIR was necessary as a control for between-glove variation. Captan permeation, after 8 hours exposure to an aqueous concentration of 217 mg/mL of Captan 50-WP, was detected at 0.8 +/- 0.3 microg/cm2 on the inner glove surface. ATR-FTIR can detect captan permeation and can determine the protectiveness of this glove in the field.

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An Introduction to Physics and Technology of Thin Films

Cited by 12 publications

References 0 publications

Chemical structure of the interface in ultrathin HfO2/Si films

Chemical structure of the interface in ultrathin HfO2/Si films

Influence of Carbon Sputtering Conditions on Corrosion Protection of Magnetic Layer by an Electrochemical Technique

Analysis of Captan on Nitrile Glove Surfaces Using a Portable Attenuated Total Reflection Fourier Transform Infrared Spectrometer

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